Ge polycrystalline films were deposited on fused silica substrates by DC double cathodes sputtering. The electrical characteristics of the films especially the carrier concentration and Hall mobility were measured as a function of target voltage and Ar gas pressure for the substrate temperature of 500°C and film thickness of 2500Å, and their crystalline structure was examined by an X-raydiffractmeter.
The Hall mobility of the deposited films increased and the carrier concentration decreased with increasing ratio of Ar gas pressure to targetvoltage. But, the diffraction patterns indicated no remarkable change of film structure.
From these results it is considered that by increasing the Ar gaspressure to target voltage ratio i, a decrease of sputtering energy, the defectswhich are due to the bombardment of high energy neutralized Ar atoms and secondaryelectrons scattered from the target during sputtering are decreased and theelectrical properties of the films are improved.
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