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Soshin CHIKAZUMI
1987 Volume 56 Issue 11 Pages
1411
Published: November 10, 1987
Released on J-STAGE: February 09, 2009
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Takeo HATTORI
1987 Volume 56 Issue 11 Pages
1412-1422
Published: November 10, 1987
Released on J-STAGE: February 09, 2009
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Hisao NAKANISHI
1987 Volume 56 Issue 11 Pages
1423-1432
Published: November 10, 1987
Released on J-STAGE: February 09, 2009
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Katsumi YOSHINO
1987 Volume 56 Issue 11 Pages
1433-1446
Published: November 10, 1987
Released on J-STAGE: February 09, 2009
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Yasuhiro KOIKE, Yasuji OHTSUKA
1987 Volume 56 Issue 11 Pages
1447-1452
Published: November 10, 1987
Released on J-STAGE: February 09, 2009
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Osamu ABE, Yoshiaki TAKETA
1987 Volume 56 Issue 11 Pages
1453-1459
Published: November 10, 1987
Released on J-STAGE: February 09, 2009
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Hideki SHIRAKAWA
1987 Volume 56 Issue 11 Pages
1460-1465
Published: November 10, 1987
Released on J-STAGE: February 09, 2009
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Yasuhiro MITSUI
1987 Volume 56 Issue 11 Pages
1466-1472
Published: November 10, 1987
Released on J-STAGE: February 09, 2009
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Keiichiro FUJITA
1987 Volume 56 Issue 11 Pages
1473-1479
Published: November 10, 1987
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Tsuneo HAMAGUCHI, Nobuhiro ENDO
1987 Volume 56 Issue 11 Pages
1480-1484
Published: November 10, 1987
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Masafumi KUBOTA, Tokuhiko TAMAKI, Kenji KAWAKITA, Noboru NOMURA, Toyok ...
1987 Volume 56 Issue 11 Pages
1485-1489
Published: November 10, 1987
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Junji ITOH, Toshihiko KANAYAMA
1987 Volume 56 Issue 11 Pages
1490-1494
Published: November 10, 1987
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Kikuo KUSUKAWA, Masahiro MONIWA, Eiichi MURAKAMI, Masanobu MIYAO, Teru ...
1987 Volume 56 Issue 11 Pages
1495-1500
Published: November 10, 1987
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Hideki TAGUCHI, Masahiko SHIMADA
1987 Volume 56 Issue 11 Pages
1501-1507
Published: November 10, 1987
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Kiyoshi TOKITA
1987 Volume 56 Issue 11 Pages
1511-1512
Published: November 10, 1987
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Shigeya ASHIZAKI
1987 Volume 56 Issue 11 Pages
1513-1514
Published: November 10, 1987
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Yoshiharu NAGAE, Eiji KANEKO
1987 Volume 56 Issue 11 Pages
1515-1516
Published: November 10, 1987
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Akio OHKOSHI, Hideaki NAKAGAWA
1987 Volume 56 Issue 11 Pages
1517-1518
Published: November 10, 1987
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Akihisa YOSHIDA, Kentaro SETSUNE, Takashi HIRAO
1987 Volume 56 Issue 11 Pages
1519-1526
Published: November 10, 1987
Released on J-STAGE: February 20, 2009
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We have developed a doping technique using broad ion beam below 10 keV without mass seperation by an apparatus consisting of a substrate chamber and an ion source with RF (13.56MHz) electric field and magnetic field. Phosphorus ions extracted from discharged phosphine gas were implanted into single- and poly- crystalline silicon (c-Si and Poly-Si). We studied depth profiles of impurities and electrical properties of doped samples. Phosphorus ions were implanted into c-Si with <100> orientation to a depth of 100nm. Sheet resistances of c-Si and poly-Si decreased to 20ohm/_??_ and 100ohm/_??_, respectively. We believe that this doping technique should be useful for the fabrication of semiconductor devices. This doping technique is applicable to dope impurities uniformly over a large area.
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Kouichi USAMI, Toshinari GOTO, Sounosuke YAMANAKA
1987 Volume 56 Issue 11 Pages
1527-1534
Published: November 10, 1987
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The electrical properties of sputter deposited Ge polycrystalline films on fused quartz substrates at a deposition temperature of 475°C and film thickness of 400nm were investigated as a function of target voltage and Ar gas pressure. The Hall mobility of the films increased from 65 to 95 cm
2/V•s as the target voltage and Ar gas pressure ratio decreased from 6 to l×10
2V/Pa. The carrier concentration decreased correspondingly. From these results, it is suspected that by decreasing the target voltage and Ar gas pressure ratio, i.e. the decrease of species energy in the sputtering process, the defects in the film due to the bombardment of arriving species emitted from the target reduced and the film properties had improved. In order to estimate the bombarding energy, Monte Carlo computer simulation of the energetic species behavior for various deposition conditions was carried out and incident energy at the substrate was calculated.
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Yasushi MIYAUCHI, Masahiro OKUDA
1987 Volume 56 Issue 11 Pages
1535-1542
Published: November 10, 1987
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The dependence of refractive index on composition and its photo-induced variation have been calculated for the Ge-As-Se ternary system, using a random network model. It is found that a maximum increase in refractive index is obtained for As
40Se
60 and a maximum decrease is obtained for Ge
33Se
67. With this random network model, the compositions where the refractive index change has maximum values can also be simply obtained for other ternary systems.
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Hironori OKII, Fuhito WATANABE, Yujiro OHBA
1987 Volume 56 Issue 11 Pages
1543-1546
Published: November 10, 1987
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Streamer electroluminescence (EL) is observed in anthracene single crystals. Impulse voltage is applied to anthracene crystals 1_??_4mm in thickness at the pressure range of 1.3_??_4.0×10
4Pa (100_??_300 Tort). When the applied voltage reaches a threshold voltage, normal EL suddenly changes to streamer EL. Next, when the applied voltage is lowered, the streamer EL returns to normal EL below the threshold voltage. Furthermore, the intensity of streamer EL is about ten times higher than that of normal EL. The peak wavelength of the streamer EL spectrum is the same as that of normal EL.
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