Oyo Buturi
Online ISSN : 2188-2290
Print ISSN : 0369-8009
Volume 77, Issue 7
OYO-BUTURI Vol.77 No.7
Displaying 1-13 of 13 articles from this issue
Preface
Tutorial
Recent Developments
Our Research
  • Toshihiko TOYAMA
    2008 Volume 77 Issue 7 Pages 823-826
    Published: July 10, 2008
    Released on J-STAGE: September 27, 2019
    JOURNAL FREE ACCESS

    The growth kinetics of microcrystalline silicon thin films must be discussed in developing high efficiency solar cells. On the basis of growth-induced surface roughening evaluated using an atomic force microscope, scaling analyses have been carried out on fractal structures on growing surfaces, and scaling exponents give a great insight into the growth kinetics. On the basis of results of scaling analyses in conjunction with Monte Carlo simulations, the growth kinetics of high-growth-rate microcrystalline silicon thin films, actually used for the high-efficiency solar cell, is discussed. Moreover, effects of boron doping on film growth are also presented.

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  • Masaki TAKATA
    2008 Volume 77 Issue 7 Pages 827-830
    Published: July 10, 2008
    Released on J-STAGE: September 27, 2019
    JOURNAL FREE ACCESS

    A digital versatile disc-random access memory (DVD-RAM) involves the melt quenching (amorphizing for record) and annealing (crystallization for erase) of chalcogenide materials. It is well known that Ge2Sb2Te5 is one of the well-established commercial media. In this study, we revealed the three-dimensional atomic configuration of amorphous Ge2Sb2Te5 and GeTe by reverse Monte Carlo (RMC) simulation with synchrotron-radiation high-energy X-ray diffraction data. RMC models suggested that amorphous Ge2Sb2Te5 can be regarded as an “even-numbered-ring structure”, because the ring statistics is dominated by four- and six-fold rings analogous to the crystal phase. On the other hand, the formation of Ge-Ge homopolar bonds in amorphous GeTe constructs both odd- and even-numbered rings. The unconventional ring statistics of amorphous Ge2Sb2Te5 is the key structural information for the better understanding of fast crystallization mechanism of the material.

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  • Hironori KATAGIRI
    2008 Volume 77 Issue 7 Pages 831-835
    Published: July 10, 2008
    Released on J-STAGE: September 27, 2019
    JOURNAL FREE ACCESS

    In this study, Cu2ZnSnS4 (CZTS)-type thin film solar cells composed of abundant materials have been developed. CZTS is a promising material as an absorber in thin film solar cells because of a suitable band gap energy of around 1.5 eV and a large absorption coefficient of more than 104 cm-1. The main objectives of this study are to fabricate high-quality CZTS thin films, improve reproducibility using an in-line-type apparatus introduced in the fiscal year 2004, and fabricate high-efficiency CZTS-type thin-film solar cells. In our experiments, various parameters in precursor fabrication and sulfurization have been optimized. We achieved a maximum conversion efficiency of 6.77 %, which is the best data obtained in this material system.

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  • −Spin current detection and spin dynamics control−
    Kazuya ANDO, Eiji SAITOH
    2008 Volume 77 Issue 7 Pages 836-840
    Published: July 10, 2008
    Released on J-STAGE: September 27, 2019
    JOURNAL FREE ACCESS

    The spin Hall effect (SHE) refers to the generation of a spin current from an electric current due to the spin-orbit scattering in a solid. This effect has been predicted to allow the electric control of magnetization dynamics in a magnetic film. The inverse process of SHE (ISHE), namely, the generation of an electric current from a spin current, can directly be applied to the electric detection of a spin current in a solid. We demonstrate these functions of SHE and ISHE using a Ni81Fe19/Pt film, a simple system in which an electric current couples with a spin current and spin dynamics. SHE and ISHE are considered essential in combining spintronics and conventional electronics.

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