The National Astronomical Observatory (NAOJ) constructed the Subaru Telescope atop Mauna Kea, Hawaii in 1999. The 8m primary mirror is actively controlled to provide the best imaging quality ever achieved. The NAOJ further developed Laser Guide Star Adaptive Optics to cancel, in real time, atmospheric disturbances to achieve diffraction limited imaging, which is 10 times sharper than the natural imaging. The operating principle of the adaptive optics, the actual devices used, and the new challenges of adaptive optics even in fields other than astronomy are reviewed. Finally, the project outline and the science objectives of the Thirty Meter Telescope, which NAOJ has started as a multinational project for astronomy in the 2020s, are described.

Since the first report of silicon solar cells in 1954, understanding solar-cell physics and improving solar-cell energy-conversion efficiencies are pivotal issues in semiconductor science and technology. Strong Coulomb interactions between carriers confined in semiconductor nanostructures cause fast Auger recombination of carriers and high-efficiency carrier multiplication. These carrier-carrier interactions play an important role in nanostructured solar cells. Recent studies on photogenerated carrier dynamics in semiconductor nanostructures are discussed for designing high-efficiency solar cells.

Silicon carbide (SiC) is the most promising semiconductor material for high-performance power devices. For such devices, the reduction of crystal defects is required. In the first half, the author refers to the mechanisms of solution growth of SiC bulk crystals. Growth on the (0001) face, the formation of a meniscus, and the control of the shapes of the growth front are important to suppress macroscopic defects in SiC bulk crystals.

To reduce the threading-dislocation density, the author has performed solution growth on 4H-SiC(1100) followed by growth on the (0001, resulting in elimination of the dislocations.

This paper reports on the recent developments in 3D display technologies, in particular super multi-view displays, electronic holography and DFD (Depth-fused 3D) displays, including the environment of the 3D business. Although the 3DTV business is struggling now, we can recognize several good signs for the 3D image business. 3D cinema has firmly established its position. Several consortiums have been established for the 3D business in Japan, Korea, etc. Standardization in 3D display technologies and guidelines about 3D content-making techniques have been conducted by a Japanese group. Moreover, 3D input technologies or 3D printer activities have grown recently.

Thus, we hope many desirable technologies will be merged into new breakthrough technologies for the Korea Winter Olympics in 2018 and the Tokyo Olympics in 2020.

In order to overcome the limitations on performance enhancement by conventional scaling in Si transistors, the introduction of new channel materials and structures are indispensable. In this report, high mobility InGaAs transistors with a triangular-shaped channel are presented. Metal organic vapor phase epitaxy was used to form sharp (111)B facets and provided higher mobility enhancement as compared with (100) surfaces. Since the proposed device structure also has the advantage of 3-dimensional transistors to suppress off-leak current, it is very promising for ultra-low power and high performance CMOS applications.

Highly mismatched alloys (HMAs) are a class of materials whose fundamental properties are dramatically modified through the substitution of host atoms with an element of a very different electronegativity and/or atomic radii. In ZnTe, the incorporation of a small amount of isoelectronic oxygen leads to the formation of a narrow, oxygen-derived band located in the band gap of ZnTe. The three absorption edges of ZnTeO cover the entire solar spectrum providing a material envisioned for multi-band, single junction, high efficiency photovoltaic devices. This report introduces recent research results on the epitaxial growth and characterization of ZnTeO HMA and its application to intermediate band solar cells.