応用物理
Online ISSN : 2188-2290
Print ISSN : 0369-8009
ISSN-L : 0369-8009
32 巻 , 11 号
選択された号の論文の11件中1~11を表示しています
  • 前田 正雄
    1963 年 32 巻 11 号 p. 807-816
    発行日: 1963/11/10
    公開日: 2009/02/09
    ジャーナル フリー
  • 三浦 千三, 原留 美吉, 伴 五紀, 武田 義章
    1963 年 32 巻 11 号 p. 817-823
    発行日: 1963/11/10
    公開日: 2009/02/09
    ジャーナル フリー
    Properties of evaporated film of Tungsten Oxide are investigated concerning the evaporating conditions, transmission spectrum and crystal structure of films temperature vs. resistivity character-istics and dielectric constant vs. frequency characteristic for as-evaporated films and heat-treated films.
    As-evaporated films have no definite composition but, when heat treated, they are found to change into WO3 films of higher resistivity and dielectric constant.
  • 水渡 英二, 荒川 正文, 益田 達之助, 三輪 修三, 佐瀬 雅一
    1963 年 32 巻 11 号 p. 823-827
    発行日: 1963/11/10
    公開日: 2009/02/09
    ジャーナル フリー
    For particle size determination, an automatic recording centrifugal instrument consisting of a balancing machine and a special rotor has been devised. The rotor has one sedimentation cell in-stead of the usual two, which makes the center of gravity of the rotor change as the particles precipitate toward the bottom of the cell. The curve of sedimentation of powder is automatically recorded by the detection of the change of center of gravity with time. With a rotor weighing ca. 500g and a sample of 1g (s. g. ca. 4), the change of center of gravity was about 20 microns which is far greater than the sensitivity 0.05 microns/div. of the used balancing machine. A theore-tical formula is derived by which the particle size distribution can be calculated from the sedimen-tation curve obtained by this method. Some samples were measured with sufficient accuracy, the results agreeing with those obtained by other methods.
  • 難波 進, 後藤 禎子
    1963 年 32 巻 11 号 p. 827-834
    発行日: 1963/11/10
    公開日: 2009/02/09
    ジャーナル フリー
    There have been many investigations on electroluminescent properties of ZnS type phosphors but very few for single phosphor particles and their emission source. The study of the light-emitting source in the particle provides valuable informations to explain the mechanism of electroluminescence.
    This paper is a microscopical study of ZnS: Cu, Cl phosphors.
    The emission is classified into four types: comparatively uniform, spot-like and line-like' emissions, and emission at the contact area.
    The voltage dependency of electroluminescent brightness of the light-emitting source in particles follows the equation
    B=B0exp(-c/√r).
    The emission characteristics at the region of contact between particles, in particular as referable to the wave forms obtained by superposing pulses on sinusoidal voltage waves, are discussed.
  • 山本 美喜雄, 渡辺 慈朗, 末永 裕
    1963 年 32 巻 11 号 p. 834-843
    発行日: 1963/11/10
    公開日: 2009/02/09
    ジャーナル フリー
    Observations are made on etch pits formed on {100}, {110} and 11111 surfaces and correspond-ing light figures of LiF crystals etched with (1) 47% HF, (2) 2% aqueous solution of NH4OH, (3) 1:1 mixture of 47% HF and glacial acetic acid added with 1% of 1 vol. % HF saturated with FeF3, and 4) and 5)0.01 and 1% aqueous solutions of FeF3, all at 20°C.
    The etching with the third and fifth solutions produce characteristic etch pits on {100}, {110} and {111} surfaces. {100} etch pits are sharply pointed and flat-bottomed tetragonal pyramids, of which the former is, while the latter is not, dislocation etch pits. On the other hand, {110} etchh pits are rounded wedges or troughs and {111} etch pits are rounded triangles, whose-correspondence to dislocations are not evident owing to their smallness in size. The second solution reveals {100} etch pits of a square form of which the reproducibility is poor, but the alternating etch with the first and second solutions produces clear-cut {111} etch pits of a triangle pyramid form, which are not dislocation etch pits.
    The observed light figures vary diversely with the shape, size, and distribution of etch pits. It has been found that {100} and {110} light figures in particular, which are revealed by etching with the third and fourth solutions, are so distinct as can be applied for the accurate orientation determination.
  • 浅野 澄忠, 中尾 安弘
    1963 年 32 巻 11 号 p. 844-850
    発行日: 1963/11/10
    公開日: 2009/02/09
    ジャーナル フリー
    The probabilities of field emission and thermal excitation of electrons in traps (or donors) with Coulomb type potential are calculated. Furthermore some calculations are made about the ioniza-tion of traps and luminescence centers in the Schottky layer of electroluminescent phosphors. From the results obtained it is concluded that most of the traps in the Schottky layer of electrolumines-cent phosphors under ordinary operating conditions are ionized at the instant when the applied ac field takes the maximum value and that the temperature change of voltage dependence of lumine-scence intensity is caused by the change of mobility of free electrons running through the Schottky layer.
  • 志水 隆一, 篠田 軍治
    1963 年 32 巻 11 号 p. 850-856
    発行日: 1963/11/10
    公開日: 2009/02/09
    ジャーナル フリー
    The deviation of the curve of intensity distribution of specimen current from that of ideal in-tensity distribution is explained by the electron diffusion theory on the assumption that some of absorbed electrons escape from the side surface of the knife edge. In applying the theory, convolu-tion of step function and Gaussian distribution is taken as that of absorption of the knife edge and intensity distribution function of the electron probe.
    Theoretical curves are obtainded for Cu, Ag and Au at 20 kV and 30 kV and their dependency on the accelerating voltage is shown.
  • 小沼 義治, 小山 恒夫
    1963 年 32 巻 11 号 p. 857-863
    発行日: 1963/11/10
    公開日: 2009/02/20
    ジャーナル フリー
    On a ceramic substrate etched chemically or a substrate with crystalline surface, carbon fibers have been obtained by thermal decomposition in a range 1100°C_??_1300°C of a mixture of H2 as a carrier gas and vaporized hydrocarbon, such as benzene, toluene and benzine, which are liquids at room temperature. With N2 as the carrier gas, however, no carbon fiber is observed.
    By this method, if the partial pressure of hydrocarbon, the amount of carrier gas and the period for thermal decomposition are properly chosen, a large amount of carbon fibers of the width ranging from 7μ to 65μ and the length reaching 8cm can be obtained.
    Electron diffraction examination, optical observation and resistivity measurement confirmed that the fibers thus obtained are polycrystalline and are composed of graphite layer parallel to the fiber axis.
    Results of this experiment show that the carbon fibers have the same properties in many respects as carbon films deposited in vacuum.
  • 有住 徹弥, 赤崎 勇, 水野 銛章
    1963 年 32 巻 11 号 p. 863-868
    発行日: 1963/11/10
    公開日: 2009/02/09
    ジャーナル フリー
    Pauw has proposed a new method for measuring the resistivity and Hall coefficient of a thin wafer of semiconductor. This method is adequate for a vapor-deposited semiconductor film on a substrate if the depletion layer of p-n junction acts as an insulator between the film and substrate. However the depletion layer is not strictly an insulator, hence, the effect of substrate can not be neglected when the conductance of film is fairly low and the lifetime of minority carriers in the film or substrate is rather short.
    A proposed way of coping with this case is that the resultant conductances and Hall voltages of the film and substrate be successively measured by Pauw's method as one after another thin layer parallel to the surface is removed from the substrate, and the resultant conductance and a quantity containing Hall voltage be plotted as functions of the thickness of substrate. The resistivity and Hall coefficient of the film can then be evaluated by extrapolating these curves to zero-thickness. This procedure has many advantages because the deposited film may be used for various devices.
  • 中尾 武夫, 金原 粲
    1963 年 32 巻 11 号 p. 869-870
    発行日: 1963/11/10
    公開日: 2009/02/09
    ジャーナル フリー
  • 1963 年 32 巻 11 号 p. 873
    発行日: 1963年
    公開日: 2009/02/09
    ジャーナル フリー
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