巻号一覧
33 巻, 7 号
選択された号の論文の26件中1～26を表示しています
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坂手 邦夫1964 年 33 巻 7 号 p. 431-432
発行日: 1964/07/10
公開日: 2009/02/09
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今井 哲二1964 年 33 巻 7 号 p. 433-443
発行日: 1964/07/10
公開日: 2009/02/09
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宮田 豊夫, 中川 修三, 平山 鳳介1964 年 33 巻 7 号 p. 444-450
発行日: 1964/07/10
公開日: 2009/02/09
ジャーナル フリーTwo kinds of electroluminescent ZnS (Cu, Mn, Cl) vacuum-deposited thin film, heat-treated and untreated, both being operative under dc and ac excitation conditions, are investigated with regard to their chemical and electrical properties. When the excitation is by dc supply, the intensity and stability of luminescence depend on the polarity of applied voltage: with untreated films, the emission is stronger when the polarity of electrode (aluminum) is negative than when it is positive; with heat-treated films, this relation is reversed. In general, untreated films are unstable when the polarity of electrode is positive and their luminescence accompanies sparks. When the excita-tion is by ac supply of low frequency, the above characteristics are also observed, suggesting that the mechanism of luminescence by dc excitation and that by low frequency ac excitation are the same. From the observation of dc luminescence, the emission is inferred to occur near the anode. In dc current vs. voltage relation, there are cases in which the films show a negative characteristic at a certain voltage, beyond which the emission increases rapidly, and raising and lowering of voltage gives a hysteresis loop.
From these obtained results, a conclusion is drawn that the luminescence is caused by the influx of carriers through heterojunctions found between aluminum electrode or NESA electrode and ZnS phosphor base.抄録全体を表示PDF形式でダウンロード (3962K) -
難波 進, 新田 順子, 岡田 正彦1964 年 33 巻 7 号 p. 450-455
発行日: 1964/07/10
公開日: 2009/02/09
ジャーナル フリーIt is possible to make highly crystallized Ge films by zone-melting of Ge films evaporated in vacuum on tungsten plates.
Two kinds of zone-melting method, the micro-zone-melting method by electron beam scanning and the filamental-zone-melting method with a linear heater, are used. As well known, vacuum evaporated Ge films are always of p-type even though n-type Ge is used as a source, but it is only when they are highly crystallized by the zone-melting that they become n-type. Those highly crystallized films withstand for a while the action of HF-HNO3 etchant adhering firmly to the substrate with ohmic contact.
The rectifying characteristic of a composte of tungsten plate electrode-crystallized n-type Ge film-evaporated p-type Ge film-and melt-bonded indium electrode is similar to that of an ordinary p-n junction and the breakdown voltage is about 20 volts.抄録全体を表示PDF形式でダウンロード (5449K) -
村山 洋一, 上田 隆三, 鈴木 孝雄, 徳川 文武1964 年 33 巻 7 号 p. 456-460
発行日: 1964/07/10
公開日: 2009/02/09
ジャーナル フリーBaTiO3 thin films are prepared on various substrates (rock salt cleavage face, glass and platinum plate) by evaporation in vacuo (10-5 Torr) or in the argon atomosphere (10-1 Torr). Evaporation is carried out in an ordinary vacuum evaporation unit with molybdenum or tantalum heating source. When powdered BaTiO3 was evaporated, X-ray and electron diffraction methods revealed that the evaporant was decomposed to BaO and TiO2.
It is observed that BaO turns out to be BaO2 or α-BaCO3 in air at room temperature and that as the temperature of the substrate is raised, crystal of BaTiO3 is formed in the film. The single crystal pattern of BaTiO3 is observed by electron diffraction method when the evaporation rate is fast and the substrate temperature is high. A sort of epitaxial growth of BaTiO3 crystal is observed on a cleavage face of rock salt by the flashing evaporation method at higher temperatures. The higher the substrate temperature and the faster the evaporation rate, the easier is the crystal-lization of BaTiO3.抄録全体を表示PDF形式でダウンロード (1175K) -
猿渡 雄二, 金原 粲, 中尾 武夫1964 年 33 巻 7 号 p. 461-468
発行日: 1964/07/10
公開日: 2009/04/02
ジャーナル フリーResistivity, Hall effect and magnetoresistance of evaporated bismuth film are measured at temperatures between 77 and 293°K in a steady magnetic field of flux density up to 16000 gauss. From the experimental results, the concentrations of conduction electrons and holes and their mobilities are calculated by the use of a two band model. The concentration of electrons is found to be nearly equal to that of holes. It is larger in the film than in the bulk; it increases with the decrease of thickness. On the other hand, the mobilities of conduction electrons and holes in the film are much smaller than in the bulk. In films thinner than 1000Å, the mobility increases with the rise of temperature. The effective mean free paths are calculated from the carrier concentrations and mobilities. They are found to be much smaller in the film than in the bulk; they decrease with the decrease of thickness. The ratio d/l∞ (d is the thickness and l∞, the mean free path determined by the internal scattering) becomes always larger than l in the thickness range between 300 and 18000Å. This means that the size effect by the diffuse scattering at surface is difficult to detect, and whether the scattering at surface is diffuse or specular remains unascertained. It is concluded that the thickness dependence of the resistivity of the evaporated bismuth film is mainly caused by the change of the mean free path, l∞, and of carrier concentrations with thick-ness. The negative temperature coefficient of the resistivity observed is due to the difference in temperature dependence of the mobility between the bulk and the thin film.抄録全体を表示PDF形式でダウンロード (661K) -
志村 秀雄, 林 彪1964 年 33 巻 7 号 p. 469-475
発行日: 1964/07/10
公開日: 2009/02/09
ジャーナル フリーThe results of investigation on some essential problems that are encountered in the process of preparing thin film superconducting circuits by vacuum evaporation are reported. (1) The deposi-tion rate of Sn film must be higher than 150Å/sec., otherwise the superconducting characteristics -the transition temperature, the electrical resistivity at the normal state, and the critical current of the film-are seriously affected. (2) As to the SiO film used for insulation, its thickness needs to be more than 1000Å to ensure its effectiveness if Sn film is to be deposited on it after it was exposed to air. But if the deposition of Sn film is to be made without the SiO film being exposed to air, thickness of more than 2500Å is necessary. (3) The adhesion of Pb terminal to glass substrate is poor; the terminal is likely to peel off at liquid helium temperature. Use of Cr film in between makes Pb film and base firmly bonded. (4) Pb-Pb contacts made by deposition of Pb over Pb film that was once exposed to air do not become s, .iperconductive. (5) The superconduct-ing transition temperature of the Sn film deposited directly on glass substrate is different from that of the bulk, owing to the difference in shrinkage between Sn film and glass at low tempera-ture. Use of SiO film between Sn film and glass removes this effect.
From the above, it is concluded that the deposition of all the films should be made continu-ously in vacuum without interruption. A continuously operated multi-layer evaporator capable of producing thin film superconducting circuits is devised.抄録全体を表示PDF形式でダウンロード (6185K) -
宮田 豊夫, 中川 修三, 平山 鳳介1964 年 33 巻 7 号 p. 476-478
発行日: 1964/07/10
公開日: 2009/02/09
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塙 輝雄1964 年 33 巻 7 号 p. 479
発行日: 1964/07/10
公開日: 2009/02/09
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横田 英嗣1964 年 33 巻 7 号 p. 479a
発行日: 1964/07/10
公開日: 2009/02/09
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延命 久司1964 年 33 巻 7 号 p. 480
発行日: 1964/07/10
公開日: 2009/02/09
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横田 英嗣1964 年 33 巻 7 号 p. 480a
発行日: 1964/07/10
公開日: 2009/02/09
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横田 英嗣1964 年 33 巻 7 号 p. 481
発行日: 1964/07/10
公開日: 2009/02/09
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疋田 正俊1964 年 33 巻 7 号 p. 481a
発行日: 1964/07/10
公開日: 2009/02/09
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犬塚 直夫1964 年 33 巻 7 号 p. 482
発行日: 1964/07/10
公開日: 2009/02/09
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本多 進1964 年 33 巻 7 号 p. 482a
発行日: 1964/07/10
公開日: 2009/02/09
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沢木 司1964 年 33 巻 7 号 p. 483
発行日: 1964/07/10
公開日: 2009/02/09
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沢木 司1964 年 33 巻 7 号 p. 483a
発行日: 1964/07/10
公開日: 2009/02/09
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金原 粲1964 年 33 巻 7 号 p. 484
発行日: 1964/07/10
公開日: 2009/02/09
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斎藤 基彦1964 年 33 巻 7 号 p. 484a
発行日: 1964/07/10
公開日: 2009/02/09
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菅野 卓雄1964 年 33 巻 7 号 p. 485-492
発行日: 1964/07/10
公開日: 2009/02/09
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吉田 重知1964 年 33 巻 7 号 p. 493-495
発行日: 1964/07/10
公開日: 2009/02/09
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柴田 幸男, 熊谷 泰爾1964 年 33 巻 7 号 p. 496-499
発行日: 1964/07/10
公開日: 2009/02/09
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中井 順吉1964 年 33 巻 7 号 p. 500-502
発行日: 1964/07/10
公開日: 2009/02/09
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D. H. WARRINGTON, 田中 清一郎1964 年 33 巻 7 号 p. 503-507
発行日: 1964/07/10
公開日: 2009/02/09
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小林 嶺夫1964 年 33 巻 7 号 p. 507
発行日: 1964/07/10
公開日: 2009/02/09
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