Falling thin stream of liquid is atomized in electro-static field. By high speed cinematography, the stream is found to undergo first snake motion, then sudden atomization. Analogy of swing of pendulum in electro-static field is used to explain the mechanism of such behavior of liquid.
Most code modulation systems involve complicated circuits. In order to avoid this disadvantage, ternary code modulation system has been developed. Codes of this particular system have a kind of ternary signals that are plus and minus pulse train and zero level signal. The plus pulse train occurs when the signal variation is over a unit level, minus pulse train when under unit level, and zero signal when equals to unit level. These ternary signals are made up simply of feedback integrator and trigger circuit. This system has the following advantages: (1) Circuit device is very simple, (2) Multi-channelizing is very easy and (3) Signal to noise ratio is improved in comparison with ΔM system. This system has a wide application in the field of applied physics such as in telemetering or remote controlling.
Thin films of iron oxides are prepared by flash evaporation of iron oxides (Fe3O4 and γ-Fe2O3), and their properties are investigated under various conditions of evaporation. The electrical resistivity is measured during and after evaporation. The crystal structure is examined by electron reflection diffraction and the magnetic property by ferromagnetic resonance. The crystal structure and electrical resistivity depend intensely on the substrate temperature Ts and filament temperature Tƒ. When Tƒ=1690°C and Ts<140°C, electron diffraction revealed spinel structure, but no ferromagnetic resonance was observed, which tells that the film is not wholly magnetic.
Various semiconductor heterojunctions, such as Ge-GaAs, Ge-GaP, GaAs-GaP, Ge-Si, ZnTe-CdS, etc., have recently been developed together with progress of epitaxial growth technique. These junctions aim at special characteristics which could not been obtained by semiconductor elements. The purpose of this study is to clarify the method of preparation of Ge-ZnSe heterojunction, which is a new pair, and its electric and photoelectric characteristics. In this experiment, ZnSe was transferred from high temperature zone to low temperature zone by disproportionation reaction (ZnI2+1/2Se2 ZnSe+I2) in a transparent quartz tube and epitaxially grown on p-type Ge (111) surface. The properties of this junction depend especially on the seed temperature, and by electron diffraction patterns, polarity of thermoelectric motive force, current-voltage characteristics, breakdown voltage and photoelectric sensitivity, the best preparing temperature was confirmed to be 1000_??_1050°C for ZnSe source and above 800°C for Ge seed. Furthermore, the best junctions thus prepared showed the rectifying ratio of 1000:1 at one volt and the photosensitivity of 10 mA/lm covering the region of 0.8_??_2.0 μ in wavelength.