This paper reviews various aspects of Si-insulator systems, especially Si-SiO2 and Si-Si3N4 system which are used in integrated circuits and other applications, from the following viewpoints, namely (1) what kind of characteristics are specified to Si-insulator systems, (2) what are the physical or chemical processes corresponding to the specifications, (3) to what extent each process is understood, and (4) how useful our understandings to the processes are in order to realize the requested characteristics of Si-insulator systems. Specifications to Si-insulator systems are classi-fied to two categories based on whether they are depending on the microscopic properties, or not. A list of insulators, which are expected to be useful is shown. Furthermore, manufacturing methods of insulator film are classified and discussed. Characteristics and structures of insulator films, and electronic properties of the interface between Si and insulator are also discussed.
Use of the polyethyleneterephthalate (P.E.T.P.) film for radiation dosimetry of electron accel-erator is studied. For this purpose 100μ P. E. T. P. films were used and studied the annealing condition. The samples were irradiated by 2 Mev electron beam generator at a distance of 40cm from the window. It is suitable to treat the-film at 100°C for about an hour after the irradiation. The reproducibility is good by the heat-treatment, because the transient component of the colora-tion by irradiation disappears by this treatment and rests only the permanent one. It is possible to use this dosimeter within a dose range from 2 Mrad to 50 Mrad. We studied some fading characteristics of radiation induced coloration of P. E. T. P. film.
This report describes the observation of “Thomson scattering” and “co-operative scattering” of a Q-switched ruby laser light by shock wave plasma. The spectral distribution of the scattered light was measured at an angle of 90° and 45° with reference to the direction of the laser light. The Q-switched ruby laser light with the peak power of the order of 1 MW was injected against the position behind the shock front of the reflected shock wave (the Mach number _??_17) which was produced at the initial pressure of 0.4mmHg in argon. In the case of the 90°-scattering, assuming a plasma parameter α=0.85, the theoretical curve accords very well with the measured spectral distribution of the scattered light. The electron temperature and the electron density were determined to be 2.3×104°K and 1.4×1016 cm-3, respectively. For 45°-scattering, the spectral distri-bution of the scattered light showed a central peak and a satellite. The wavelength shift of the satellite peak was 27Å. In this case α=1.57, ne=1.6×1016cm-3, and Te=2.6×104°K were estimated. These values are in good agreement with the results of 90°-scattering.
A new type of parallel plate plastometer is designed with a minor modification of the penetro-meter improved by the same authors (Oyobuturi 34, (1965) 745). The plastometer requires a smaller amount of sample than the conventional one and makes the automatic measurement of viscosity from 102 to 108 poises possible. The non-Newtonian flow of a silicone oil is analysed by use of the plastometer.
Snowcover depth gauge, previously reported, is based upon the photocurrent measurements of silicon photocells, distributed along a generatrix of a pole standing on the ground, where their current depends upon their location higher or lower than the snow-cover surface. Now the gauge is improved to measure the maximum snowcover depth 1.5m and also to measure the difference of photocurrents bet-ween the succeeding cells. Depth could be measured easily and accurately whenever the intensity of sunshine varies rapidly. Moreover the formation of the concave snowcover surface around the pole is discussed by the heat transfer from the pole surface to the snowcover surface.