Papers published so far on optical properties of thin metal films are surveyed. Mainly, various methods for determining optical constants and thickness of films, studies of characteristic optical phenomena due to film structure and models for explaining anomalous optical absorption of island films are reviewed.
Performance of a pick-up tube with a Si diode array target is analysed. Relationship of the characteristics of this tube target to the properties of bulk semiconductor and p-n junction of the target is theoretically clarified, which led to the design in the production of this tube. Several problems concerning semiconductor material and device fabrication are given as com-pared with the ordinary vidicon.
Single crystals of optically good quality KTaxNb(1-x)O3(KTN), 10mm×10mm×15mm in size, are prepared by a modified Kyropoulos technique from melts which contain excess of K2CO3. The as-grown crystals possess well-developed (100) surfaces. When K2CO3 content is chosen to be 52_??_55 mol %, colorless and transparent crystals are grown and their resistivity ρ is as high as 1013Ω·cm. However, with increasing K2CO3 contents over 60 mole %, values of ρ decrease to 108Ω·cm and crystals become blue in color. Dielectric constant at Curie temperature Tc and Curie-Weiss constant are independent of K2CO3 content. Half-wave voltage Vπ are measured for several samples at temperatures about 10°C above the Tc. The value of Vπ, is about 300 V, which remains constant with K2CO3 content.
Properties of electron beam evaporated SiO2 films are studied with P etch rate, infrared absorption and electrical characteristics. It is found that these properties depend mainly on the deposition rate. At a slow deposition rate, for example 100 Å/min, P etch rate is 450 Å/min, dielectric constant is 4. 15 and dielectric strength is 5.4×106 V/cm. At a fast deposition rate, for example 1000 Å/min, P etch rate increases to 1600 Å/min. After annealing at 400-800°C in oxygen atmosphere, P etch rate and infrared absorption were observed to approach those of thermally grown SiO2 films. Films annealed at 800°C were observed to have approxi-mately the same properties as those thermally grown.
Using a holographic imaging, high speed spectroscopy of the electric explosion of a cop-per wire in air has been recorded at rates between 3×105 to 4×105 frames per second. As a result of the experiment, a few line spectra of neutral copper atoms were observed after restrike occured, which were not observed during the first electric current pulse. The success of the present work seems to indicate the usefulness of using the hologra-phic imaging for the spectrum analysis of rapid self-luminous phenomenon.