Expression of the electrical resistivity of the magnetic dilute alloy is derived by the method used by Kondo when he found the well-known logarithmic singularity. The expression could give reasonable explanation to the experimental results for copper-manganese system with manganese concentration from 0.06 to 5.2 atomic percent in the temperature range between 2K and 300K. In higher concentration above one atomic percent, the resistivity shows a considerable contribution from the logarithmic term in higher temperature range, and the coefficient of the term agrees well with that of the low concentration alloy. On the basis of the above results, the peculiar temperature dependence of Manganin, the standard resistance material, which has 12 percent manganese in copper, could be explained substantially, and very low temperature coefficient of the resistivity near room temperature would be expected from the strong influence of the logarithmic term by Kondo.
The filter pack method used for measuring the radon concentration in air is described. We may estimate the radon concentration by this method assuming radioactive equilibrium among radon and its daughter products. The absolute collection efficiency of a millipore filter whose pore size was 0.3 microns was examined, and it was clarified that the filter collects almost perfectly radioactive aerosols in the air. The radon concentration in the air was measured simultaneously by the charcoal trap method and the filter pack method. The filter pack method was found to be fairly useful for measuring radon concentration in the air.
As a method of measuring the mass transfer rate dM/dt, the rate of change in the intensity of specularly reflected light dI/dt has been employed. In the case of frost deposits, the relation dM/dt=-KdI/dt (K: const.) is shown to hold particularly well. Experiments show that dM/dt is proportional to σ, Re1/2, n1/2 and ƒ(Tm), where σ is the supersaturation with respect to ice, Re. the Reynolds number, n the number of ice islands per unit area of mirror surface and ƒ(Tm) a function of mirror temperature. In addition, n is proportional to Re1/2, exp[ln2(Se)] and (ΔTm/Δt), where Se is the saturation ratio and (ΔTm/Δt) the cooling rate of the mirror surface. The optimum sensitivity for dew-point instrument must be set on the basis of these results.
Hall effect measurement were carried out for vacuum deposited CdSe films at temperatures between -196 and 70°C. The Hall mobility increased exponentially with temperature for the CdSe films of low carrier concentration but Tn(n=1.8-2.2) dependence was observed in the case of high carrier concentration. Variations of Hall mobility, carrier concentration and electrical conductivity of CdSe films as a function of gate electric field were measured on the samples of TFT structure. The deposition temperature dependence of the Hall mobility of CdSe films was investigated and it is shown that dependence of gm of the CdSe TFT on the deposition conditions is primarily attributed to the variation of the Hall mobility of the CdSe films. X-ray diffraction and electron microscope studies on CdSe films are also described.