Method of composition determination of thin films and surface layers of solids using microbeams of X-rays, Auger electrons and secondary ions is reviewed and discussions are made about their limitations and accuracies. About X-ray method using electron microprobe a historical survey from the early stage of thickness determination to present Monte Carlo calcu-lation of Kyser and Murata has been done. For Auger electron spectrometric method Palmberg view of quantitative analysis was introduced and some discussions has been made. As to the quantitative procedures using secondary ions a practical methods Andersen based on thermodynamical considerations and results of Castaing and Slodzian based on physical process investigations were reviewed.
Some properties of the stress-sensitive piezoresistive regions formed by the selective diffu-sion of p-type impurities into silicon have been theoretically and experimentally investigated. Gage-factor of the diffused layer is dependent on surface impurity concentration but is independent of layer thickness. The results were applied to a transducer with a single-crystal silicon diaphragm having pressure-sensitive piezoresistive regions.
The adverse effects of moisture on Si devices have been wellknown for a long time. It is important to investigate the adsorption properties of the insulators which passivate the Si devices. However the behavior of H2O in the insulator films has not been much studied for the lack of suitable measurement technique. This report is concerned with new thchniques to evaluate the trace amount of H2O in CVD oxide films by mass spectrometry and BET surface area by Kr adsorption method. Moreover, the adsorption characteristics of the CVD oxide films were investigated by the quantitative measurements of their porosity and H2O contents.
The nanosecond laser-photolysis system were studied with a repetitive nitrogen gas laser and with two different types of spectro-flashes. The first is the xenon flash with a few micr-osecond pulse duration. The laser trigger system consists of two successive spark-gap switches which are operated by a common trigger pulse to the xenon flash. The details of the actual construction of the coaxial-type nitrogen laser, gap switches, and trigger system are described. The second is the fluorescence of an organic dye solution excited by the nitrogen laser. The laser pulse passes through the dye cell and also excites the adjacent sample solution. The photo-physical properties of the pyrene solution were studied. The absorption spectra of the lowest excited singlet state to the higher excited states, of excimers, and of the lowest triplet state were observed. The time-resolved absorption spectra clearly show the photo-dynamic behaviors of these excited states. The characteristics of the present two methods are discussed.