During the years, the physics and technologies of ion-implantation have been extending and showing many fruitful results on silicon. Now it should be proceeded to other materials, especially to the compound semiconductors. However, most of the compound semiconductor shows different behaviors from monoatomic and covalent silicon crystals, which have diatomic and ionic features in their bonding states. Even in the case of thermal diffusion of impurities into a material, the mechanism is much peculiar compared to that of silicon. It is natural that the remarkable phenomena different from that of silicon are there in ion-implantation of compound semidonductors. I have pointed out their several evidences in which there reveal many interesting physical new observations and applications to devices. I assumed some plausible mechanisms on these phenomena and presented some suggestions which might be opened the way to new physics and technologies of compound semiconductors. Materials mainly used in this report are GaAs, GaP, GaAs1-xPx and CdF2, CdS, and topics contained in the report are the luminescence spectra of Zn implanted and post-annealed GaAs1-xPx localized states produced by ion-implantation into ionic compound, nature of random lattice states of heavily implanted GaP and GaAs, N+ hot-implantation of GaP and related topics included my proposals to an aproach for ion-implantation mechanism such as thermochemical ones.
A bimetallic psychrometer of temperature-difference and temperature type is composed of a compound bimetallic differential thermometer and a bimetallic thermometer. The compound bimetallic differential thermometer is constructed from two helical coils of bimetal connected in series, of which the senses of thermal deflection are mutually opposite and the angular def-lections for the same temperature change are equal. The helical coils of the bimetal used are 4 mm in diameter and 40mm long, and are connected to the ends of a plastic rod 50mm long. A suitably adjusted compound bimetallic differential thermometer gives accurate temperature differences. One of the helical coils of the bimetal serves as the wet thermometer and the other serves as the dry thermometer. It is found experimentally that the necessary minimum air velocity for the bimetallic psychrometer is about 0.7m/s. Experimental data show that the Sprung's psychrometric formula holds well for the bimetallic psychrometer.
A differential pressure type mass flow meter, is composed of compound pipes in parallel with two branch pipe lines of equal size, a constant flow pump, two differential manometers and flow controlling valves. Both of the branch pipe lines I, II have two straight portions of equal diameters and the differential manometers measure the pressure differences of each of the straight portions of both branches. The liquid to be measured flows in the pipe line and then is divided into two branches. The flow rate in branch pipe I is so controlled that the pressures at the straight portion of upstream sides are equal to each other. A constant volume flow rate is sent by the pump from the pipe line II to the pipe line I, then the difference of pressures at the straight portions of the two pipe linesis proportional to the mass flow rate.
A practical method for calculating a magnetic circuit with magnetically saturated pole pieces has been proposed. At first, the magnetic flux density in the pole surface was estimated from the requested field strength at the center of the air gap. From this flux density, internal permeance and magnetomotive force in a small divided region adjacent to the pole surface perpendicular to the axis of the pole piece were calculated from the B-H magnetiza-tion curve. The flux density in a neighbouring small region was also calculated by a stepwise method by applying the magnetically equivalent Ohmic law. These calculations were continued until the flux density reached to around 70% of its saturation value. Finally, required ampere turns for an electromagnet or dimensions of a permanent magnet were deduced by summing up each flux and magnetomotive force. Several calculated results were compared with the observed ones for some. magnet systems in current use, and fairly good coincidences were obtained.
A new type semiconductor photosensitive device has been developed, differing from the photodetectors used hitherto in its characteristics and physical principle. Though the semi-conductor device oscillates in the dark with applied voltages above a certain threshold voltage, the threshold voltage decreases and the frequency of oscillation increases sensitively as the irradiation light intensity increases. 1) The frequency increases as the applied voltage increases. 2) The pulse width is found to be 1.2 psec independently of the applied voltage. 3) A frequency change of 1 kHz_??_lMHz is obtained depending on the applied voltage and the device structure. 4) Under a fixed applied voltage, the frequency variation with the illumination variation of 1lx is observed to be 160 Hz. 5) The threshold voltage decreases by 10 volts for a tenfold change in the light intensity. These results are explained by using an energy band model.
In this paper, various experimental results of the water tree obtained in polyethylene using the water electrode method are described. The mechanisms of the initiation and growth of the water tree are discussed. The electric field in the initiation of the water tree is about 0.7_??_3.5MV/cm, depending on the frequency of the applied voltage, being smaller than the intrinsic breakdown strength of polyethylene at 20°C. The growth of the water tree is observed for the water resistivity below 10kΩcm. No differences in the growth of the water tree are found among solutions having an equal resistivity. It is concluded that the force exerted on polyethylene by applying the alternating voltage forms micro-cracks in it and the water permeates into them, because the dielectric constant of water is larger than that of polyethylene. With a high electric field and a high frequ-ency, vaporization of water due to dielectric heating may occur, and the vapor may permeate into the amorphous region or micro-cracks formed by the vapor pressure.