This paper reviews some recent works on the generation and suppression of lattice defects introduced during thermal oxidation which is of major importance in the silicon device fabrication technology. The major parts of discussion are the nucleation and growth of oxidationi-induced defects, their influence upon device performance, diffusion and dislocation generation, and the elimination of the defects.
A method of analysis of the characteristics of a transistor is presented, whereby the transistor parameters are analysed by the state variable method. In this method, response functions and parameters of a transistor are fitted more exactly over a wide range of time or frequency, by extending the approximation to a higher order. By using the response characteristics, thus obtained the transistor parameters, ƒT and h parameters etc. can be . mutually transformed as exactly as desired.
Taking account of the ruby's absorption anisotropy, it is shown that several parameters of the amplifying rod can be determined simultaneously by a simple, experiment of a light amplifier. In this experiment, when a linearly polarized beam is put into the amplifier as an ordinary ray and as an extraordinary ray, the amplification factors of passed light and the attenuation factors of the unpumped rod are measured for each ray. From these experimental values, absorption coefficient for the ordinary ray αo, that for the extraordinary ray αe, loss coefficient γ, and normalized inversion η of the rod can be determined through simple relations. Results are given, in which the parameters of some 'actual ruby laser rods are determined by this method.
The anti-arc spots performances of the IVIHD channel materials (Al2O3, BeO, MgO, ZrO2, Copper, and Inconel) have been discussed using an arc spot model. The computational proce-dure is based on the analytical solution of the two-dimensional transient heat conduction problem in a finite body subjected to a nonuniform heat flux over a small circular part of its upper surface. Effects of the arc spots on the material removal are investigated with the aid of temperature distributions which depend on the various parameters such as the arc spot life, the heat flux levels, arc spot diameter, and properties of the materials.
Neutron yield from plasma focus is enhanced when the instability is excited spontaneously in the pinch plasma. The threshold pressure for this instability excitation is given by the relation p∝V1.5 for D2 gas. The path of the neutron flight to the detector is successfully collimated by paraffin blocks and an ion temperature of 4. 2 keV is obtained from neutron spread by the time of flight method. On the other hand, in weak focus plasma region, where no oscillation occurs by itself, TEA CO2 laser triggers the same instability. This induced instability thermalizes the pinch plasma, and neutron yield is enhanced to 2. 3 times of that without laser irradiation.
A simple tester is developed for detecting the difference of temperature between the air in a thermostatic air chamber and its inner wall. The tester consists of two thin copper plates, one coated with a mat black paint and the other plated with gold. A differential thermocouple is attached to the copper plates. When the temperatures of the air in the chamber and the inner wall are not the same, a temperature difference is produced between the two plates, which is generally different from the temperature difference of the tester for which a theoretical equation is derived. The ratio of the temperature difference of the tester to the temperature difference between the air in the chamber and the wall is found to be dependent on the heat transfer coefficient of the tester and the wall temperature. Some typical data obtained using the tester are presented to evaluate its performance and the influence of radiation discussed.