Electrical resistivity, internal stress and surface corrosion of vacuum deposited Mo films on SiO
2/Si substrate have been studied in relation to the film structure for the purpose of application to gates and interconnections of MOS LSIs.
The resistivity is mainly dominated by grain boundary scattering of conduction electrons. The reflection coefficient of electrons at grain boundaries is determined by oxygen content in grain boundaries. The tensile stress in Mo films increases linearly with heat treatment temperature up to 1000°C. The increment of tensile stress can be explained by volume contraction of film due to increase in grain size. The surface corrosion of Mo films in deionized water and moisture has been investigated quantitatively using ellipsometry. The corrosion has also been found to be caused by grain boundaries.
Studies of processing of Mo gates and interconnections have also been made, and we have succeeded in making a high speed MOS RAM.
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