In this paper present status and future development of bubble memory device will be presented from a viewpoint of its practical use.
In order to improve the cost performance of bubble memory, it is necessary to achieve a higher bit density chip with decrease of production cost.
Conventional permalloy devices can have chip bit densities of up to about 1M bits/cm
2 with low production cost. However for higher bit densities, for example, greater than 4M bits/cm
2, it is believed that new device concept must be introduced.
The ion implanted devices, the wall coding devices and the Bobeck current access device have been developed for producing higher bit density chip. At present it seems that the ion implanted devices are the most promising among them and will yield chip with densities of up to about 10M bits/cm
2.
Achievement of such a high bit density gives promise of bright future for bubble memory.
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