Present status of research on III-V compound semiconductor MIS interfaces is reviewed with particular emphasis on GaAs and InP. The following topics are discussed.
(1) Summary and comparison of existing methods of oxidation and film deposition in terms of composition, structure of interface region and electrical properties. Interfacial chemical reactions of native oxides are briefly discussed.
(2) Electrical characterization of MIS interfaces. MIS capacitance behavior, density-distribution and dynamic properties of interface-states are discussed, and various anomalies that are absent in Si MOS interface, are pointed out. As apossible explanation of these anomalies, authors' unified electrical modeling ofinterface is briefly described.
(3) Origin of interface states. Existing models concerning the origin of compound semiconductor MIS interface states are roughly classified into three categories, and a brief comparative discussion is made.
(4) Application of MIS interfaces to high-speed MISFET devices and ICs.Application to MIS solar cells is also briefly mentioned.
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