The phosphorus concentration, chemical structure of phosphorus, etching rate and the density of the SiO
2 films deposited by rf-sputtering using P
2O
5-SiO
2 sintered target were studied. And the gettering effect of mobile ionic charge for this film was also investigated. It was found that the phosphorus concentration depended strongly on the distance between the target and the substrate (
dT-S) in the case of low power density sputtering, i.e. it increased with an increase of d
T-S, but it decreased slightly in the case of high power sputtering. Furthermore, the effect of mobile ionic charge gettering was clearly observed in the SiO
2 film deposited by this method. And the value of 5 5×10
9cm
-2 was obtained as the mobile ionic charge density in a phosphorus concentration of 1×10
21cm
-3.
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