By means of electron beam annealing, a superconducting V
3Si phase has been formed in an amorphous V
3Si alloy film. In sample films with the approximately stoichiometric composition,
Tc rose linearly with increasing beam power density,
PD, while in other samples
Tc was independent of
PD. Observed maximum Tc onset was about 16.5 K. Obtained results were discussed from the crystallographic point of view.
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