A New rheometer, which can measure a wide range of viscosity by automatically adjust-ing the arm length and balancing force in detecting the torque by the rotary cylinder method, was developed with the use of a micro-computer. The measurement can be con-veniently made by conversation with the micro-computer through a console.
The movable channel flowmeter reported herein is a device of a very simple construction for measuring flow rate in an open channel. The measuring principle of this flowmeter is based on the law of conservation of momentum or angular momentum similarly to the movable tube flowmeter. It has been found from the results of our experiments that the L bend flowmeter of two measured quantities type is better than the straight flowmeter.
A sedimentation-potential-generating apparatus has been improved to realize precise measurement. From the theoretical discussion, it is found that the total mass of the moving parts consisting of a sample solution, its measuring container, a copper electromagnetic shield made in the form of a thin cylinder, a connecting rod, and the intrinsic mass of the moving parts must be decreased, and that the mass of the sample solution should be equal to the total mass of the remaining moving parts. Therefore, the apparatus is so designed that the shield is divided into two parts, a moving shield and a fixed one whereby the total shield mass is lightened, and the measuring container is also lightened. The apparatus has been applied to measure the sedimentation potentials of twenty alkali halide solutions. The results show that the rate of change of the sedimentation coefficient due to atomic weight is approximately proportional to the transport number.
A pair of control electrodes between which an AC control voltage can be applied is inserted into the positive column between the target and the substrate holder in order to control the target current of DC diode sputtering systems. By this means the target current can be kept constant within a deviation of ±2% for even such a large pressure change as from 2.7 to 5.3 Pa. This method has been applied to the deposition of Ta films, and electrical properties of the films were investigated. Deposition rates were found to be independent of control voltages. Although specific resistivities and temperature coefficients of resistance were slightly affected by control voltages, the effect was negligible for the applied voltages between 30 and 130 V. This method is found to be very effective for massproduction inline systems combined with a rough pressure control system.