The fundamental concept of the relaxation semiconductor proposed by van Roosbroeck and Casey is critically discussed and a new model is proposed. It is indicated that the essential behavior of carriers in this type of semiconductors can not be correctly predicted by the approximation
pn_??_ni2, but can be visualized only by considering even a small deviation from
pn=ni2, as derived by the present new approach. It is revealed that the injection of minority carriers can lead to a depletion of majority carriers, only when the density of filled recombination centers lies in the limited narrow region and the injection level is relatively low. This model is applicable to all cases for the minority carrier injection, whether the relaxation times of electrons and holes are large or small, and whether the density of traps is large or small.
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