Diamond thin films and diamond particles have been formed by thermal chemical vapor deposition (thermal CVD) using organic compounds such as CH
3OH, C
2H
5OH, CH
3COCH
3, C
2H
5OC
2H
5 and (CH
3)
3N. These organic compounds contain a combination of C, H and 0, or that of C, H and N. The films are grown on silicon substrates with high growth rates (8-10 μm/h). Such growth rates are 10times faster than the CVD method using hydrocarbons such as CH
4 and C
2H
3. The films have good crystallinity and high quality without graphitic and amorphous carbon in the sense of electron diffraction and Raman spectrum. The growth conditions are not particularly severe, the reaction pressure range is as wide as 1_??_800 Torr. It is considered that methyl radical (CH
3) and atonic hydrogen (H) play important roles in the synthesis of diamond.
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