Siおよび関連材料の分子線エピタキシー (MBE) 研究の現状と今後の見通しについて解説した.まず, Si MBE技術の基本となる,基板のクリーニング法や,ホモエピタキシー膜の膜質の現状と問題点を指摘し,各種ドーピング法を紹介した.また, MBE法の長所であるヘテロエピタキシー(金属/Si,絶縁物/Si,帯導体/Si)の研究経過と現状を述べた.最後に, Si MBEのデバイス応用に関する最近のトピックスをいくつか取り上げ,その狙いについて考察した.
We performed controlled processing on silicon nitride and carbide, using laser pulses from an A/O Q-switched continuously pumped Nd: YAG laser. The removal process can be carried out by overlapping many drilled holes with single pulses at a Q-switch frequency which does not exceed 5 kHz. The experimental values obtained from processing depth and surface roughness were in agreement with the values calculated on the assumption that the shape of the hole is a frustum of a cone. The removal amount per single Q-switch pulse is approximately pro-portional to the pulse energy with the constant of 2_??_4×10-3 mm3/J for silicon nitride. As a result of this experiment, it is found that the scanning method with a frequency modulated Q-switch Nd: YAG laser should be a successful method for ceramics as well. Pictures of the processed samples are also shown.