It was recently reported that a microwave baking is also available for the photoresist baking. However, the baking mechanism of photoresist by microwave is not yet clear.
The basic properties of the microwave baking are studied by measuring the dependence of the undercut length of SiO
2 layer on Si substrate and IR spectra of Photoresist on microwave irradiation time and microwave power with a conventional synthetic rubber-diazide photoresist.
The results obtained are as follows:
(1) In the microwave baking method, the undercut length of SiO
2 is minimized, when the microwave power is cut off at the moment of the surface temperature of Si0
2 layer to be raised to 140°C.
(2) The degree of the oxidation of the photoresist irradiated with microwave is less compared with the conventional heating method.
(3) Even is the case of the microwave baking in air, is not observed the resist flow which usually occurs in the case of the conventional one.
(4) The SiO
2 undercut length with microwave baking is shorter than that with the conventional one.
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