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Jae-Chang Jung, Cheol-Kyu Bok, Ki-Ho Baik
1997 年 10 巻 4 号 p.
529-533
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
ArF excimer laser(λ=193nm) lithography is emerging following KrF DUV lithography(λ=248nm ). 193nm lithography has proven its potential for feature sizes down to 0.15μmlines/spaces patterns using high NA(O.6) because of resolution improvement. However, in practical use of ArF technology, there are problems involved in the properties of photoresist. To solve these problems, we synthesized ArF polymer resin, poly(2- (2-hydroxyethyl) carboxylate-5-norbornene / 2-t-butylcarboxylate-5-norbornene/2-carboxylic acid-5-norbomene/Maleic anhydride), all of the main chains are composed of alicyclic unit. 2-(2-Hydroxyethyl) carboxylate-5-norbornene was found as a very suitable adhesion promoter. Using this resist, 0.15μm L/S pattern was obtained at 14mJ/cm
2 doses, using an ArF stepper on the developer, 2.38wt% tetramethyl ammonium hydroxide aqueous solution.
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Takashi Hattori, Yuko Tsuchiya, Ryoko Yamanaka, Keiko Hattori, Hiroshi ...
1997 年 10 巻 4 号 p.
535-544
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
We have developed novel alicyclic polymers having monoacid ester structures by alcoholysis of non-conjugated cyclic diene and malefic anhydride copolymers. This polymer, named ALPHA, exhibited good solubility (10-50nm/sec) in 0.113% aqueous tetramethyl-ammonium hydroxide solution without swelling. Absorbance was around 0.6 μm-1 at 193nm. Dry-etching resistance for Cl
2/BCl
3 gas was the same as that of polyhydroxystyrene. A two-component resist system, consisting of 1-ethoxyethyl-protected ALPHA polymer and onium salt, produced 0.20-μm line-and-space patterns using a KrF excimer laser stepper with a phase-shifting mask. Consequently, we believe ALPHA is suitable as a base polymer for ArF excimer laser resists.
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Koji Nozaki, Ei Yano
1997 年 10 巻 4 号 p.
545-550
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
We used a methacrylate polymer with two acid labile protective groups, mevalonic lactone and 2-methyl-2-adamantanol (Fig. 1), for a 193-nm resist.[1-4] THF resist demonstrated high sensitivity and a high resolution as a single layer resist. In this paper, we investigated polar five protective groups in place of THF lactone group to obtain necessary properties for good lithographic performance. We discuss THF impact of THF polarity and acid cleavability of THF protective groups to make a good match to 2-methyl-2-adamantyl group. Among THF selected protective groups, we found that 3-hydroxy-γ-butyrolactone yielded acceptable lithographic performance.
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Takeshi Ohfuji, Makoto Takahashi, Masaru Sasago, Soh Noguchi, Kunihiro ...
1997 年 10 巻 4 号 p.
551-558
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
We analyzed the characteristics of acid amplified positive resists designed for 193nm lithography. The acid amplified resists are composed of an acid generator, a partially protected alicyclic polymers and an acid amplifier which is designed to produce acid during post-exposure baking. We first investigated the lithographic performance of acid amplified resists. Then we have simulated acid amplification reactions and calculated process window improvement. The simulation analysis clarified that acid amplification slightly contributes to increasing the process margin.
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Koji Asakawa, Tohru Ushirogouchi, Naomi Shida, Takeshi Okino, Makoto N ...
1997 年 10 巻 4 号 p.
559-560
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
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Kaichiro Nakano, Katsumi Maeda, Shigeyuki Iwasa, Etsuo Hasegawa
1997 年 10 巻 4 号 p.
561-569
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
This paper describes the properties of our new alicyclic-methacrylate polymer, poly(carboxy-tetracyclo[4.4.O.1
2, 5.1
7, 10]dodecyl methacrylate) (poly(CTCDDMA)), which was designed as a base polymer for the resist for ArF excimer laser lithography. The etching rate of the polymer for chlorine plasma was 1.15 times that for a novolac-based resist, indicating a higher etching durability than that of poly(
p-vinylphenol).
We also studied the adhesion properties of an alicyclic-methacrylate polymer by estimating the work of adhesion using poly(carboxy-tricyclo[5.2.1.0
2, 6]decylmethyl methacrylate) (poly(CTCDMA)). We found that the adhesion decreased with an increase in the protection ratio for the polymer, and 60%
tert-butyl protection caused stripping and collapse of the resist pattern in the standard developer, 2.38% tetramethylammonium hydroxide (TMAH) aqueous solution. We obtained appropriate adhesion using a diluted TMAH aqueous solution as a developer and found that a proper developer-concentration could be determined using the work of adhesion of a polymer. Additionally, we confirmed that introducing a _??_20% hydroxy-tricyclodecyl(meth)acrylate (TCD(M)AOH) unit into the polymer raised the work of adhesion to 74.0mN/m, which was higher than that of the novolac-based resist (73.5mN/m). This made possible the pattern resolution of a poly(CTCDMA)-based resist in the standard developer. We obtained a 0.35-μm pattern using a resist based on a terpolymer containing TCDAOH and the standard developer.
The chemically amplified resist composed of a 33% ethoxyethyl-protected poly(CTCDDMA) and N-hydroxysuccinimide tosylate resolved a 0.15-μm L&S pattern at a dosage of 21.8mJ/cm2, with an ArF prototype lens (NA=0.55) and using a 0.024% TMAH developer.
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Hans-Thomas Schacht, Pasquale Falcigno, Norbert Münzel, Reinhard ...
1997 年 10 巻 4 号 p.
571-578
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
The concept of crosslinked polymers linked via an acid labile unit is extending the utility of acetal protected polyhydroxystyrene. These units, which are formed during a transacetalization reaction, are cleaved by the photogenerated acid in the exposed areas and remain in the unexposed areas. The large molecular weight difference between exposed and unexposed areas of the resist leads to improved resolution capability. The link between the polymer chains is introduced by an aliphatic bifunctional alcohol, bridged via acetal moieties to the phenolic moieties. The molecular weight distribution is proportional to the amount of the alcohol. The polymer structures were evaluated by nuclear resonance spectroscopy and gel permeation chromatography. Photoresist formulations based on these polymers have improved thermal stability of the patterns. In addition to good post exposure delay, these formulations show an excellent soft bake delay time behavior.
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Yuko Tsuchiya, Takashi Hattori, Ryoko Yamanaka, Hiroshi Shiraishi
1997 年 10 巻 4 号 p.
579-584
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
Acid-catalyzed insolubilization reactions between novel amphiphilic alicyclic polymers (named ALPHA) and aliphatic carbinols have been investigated for aqueous base-developable ArF single-layer negative resist. The combination of an ALPHA polymer (PMBH-BHMTCD) and an aliphatic carbinol (1, 4-dioxane-2, 3-diol (DD)) exhibited the highest insolubilization reactivity. It was found that the resist composed of PMBH-BHMTCD, DD, and N-trifluoromethanesulfonyloxynaphthalimide showed high dissolution rate contrast. However, the obtained patterns showed swelling distortion in the sub-pm range. FT-IR spectrometry indicated that the dominant insolubilization reaction was the crosslinking induced by acid-catalyzed etheriflcation. It is concluded that the swelling distortion in the sub-pm range was due to remaining carboxyl groups in the exposed area.
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Young-long Kang, Haiwon Lee, Eung-Ryul Kim, Sang-Jun Choi, Chun-Geun P ...
1997 年 10 巻 4 号 p.
585-588
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
A new positive chemically amplified resist which consists of novel methacrylate terpolymer with bis(trimethylsilyl)isopropyl group and a photoacid generator has been developed for ArF excimer laser photoresists. The polymer structure and properties was evaluated by 1H-NMR, UV, FT-JR. DSC, TGA and GPC. This new terpolymer demonstrates good thermal stability up to 135°C, good dry-etching resistance, high transparency (75%) for a ArF excimer laser exposure. Preliminary line and space patterns were obtained using an ArF excimer laser exposure system.
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Taku Morisawa, Nobuyuki Matsuzawa, Shigeyasu Mori, Yuko Kaimoto, Masay ...
1997 年 10 巻 4 号 p.
589-594
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
We have proposed a chemically amplified Si containing resist used silsesquoxane polymer for ArF Lithography (CASUAL). ACASUAL-type polymer of carbon-acid-cyclohexl-silsesgouxane with photo-acid-generators acted as positive-tone resists under ArF exposure; the resist was highly transparent (<50% at 350-nm-thick resist), highly sensitive (<7mJ/cm2) and showed excellent resolution (sub 02μm) for 193-nm exposure. Well-defined sub-02μm BLR patterns were delineated successfully.
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Takahiro Matsuo, Masayuki Endo, Masamitsu Shirai, Masahiro Tsunooka
1997 年 10 巻 4 号 p.
595-601
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
Surface modification resist (SMR) process, which gives negative-tone image owing to the polysiloxane formation on exposed resist surface using chemical vapor deposition (CVD), was studied for ArF excimer laser lithography. The selective polysiloxane formation is based on the hyckolysis of alkoxysilane and subsequent condensation in the presence of a photo-induced acid catalyst and water. The selectivity of water sorption in the exposed region determines the selectivity in surface modification. We proposed a polymer system with a polarity change unit for improving an affinity for water. This polymer improved the selectivity in the surface modification as compared with a polymer without the polarity change unit. 0.13μm pattern fabrication was achieved by using this polymer for ArF lithography. Furthermore, the patterned polysiloxane layers below 0.20μm feature were stably formed in the delay time of several days from the exposure to the CVD treatment.
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Shigeyasu Mori, Nobuyuki Matsuzawa, Taku Morisawa, Yuko Kaimoto, Masay ...
1997 年 10 巻 4 号 p.
603-608
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
The diffusion kinetics of vapor-phase silylation were investigated. The diffusion of the silylation agent in vapor-phase can be explained using the Fickian model. The diffusion depends greatly on the conditions of the silylation. In order to make the process viable, the silylation parameters must be optimized. The soft-bake process also effects the diffusion of the silylation agent. The soft-bake needs to be processed with stable parameters. The activation energy, the frequency factor and the reaction energies of the silylation reaction are analyzed for a few systems that have a resist and a silylation agent. The silylation reaction is not the rate-determining factor of the silylation process from the calculated results. It is found that the frequency factor is related to the glass-transition temperature of resists.
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Teruhiko Kumada, Hiroshi Adachi, Hiroshi Watanabe, Hiroaki Sumitani
1997 年 10 巻 4 号 p.
609-612
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
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Azalia A. Krasnoperova, Scott Hector, Andrew Pomerene, Angela Lamberti ...
1997 年 10 巻 4 号 p.
613-618
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
Patterning of 100nm critical dimension features using X-ray proximity lithography is discussed. Lithographic performance is shown using photoresists APEX-E. UV-4 and an experimental formulation of ESCAP photoresist. Conditions to pattern isolated and nested lines at maximum permissible gap is discussed.
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Y. Chen, F. Carcenac, F. Rousseaux, A.M. Haghiri, H. Launois
1997 年 10 巻 4 号 p.
619-623
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
We studied the x-ray image formation of sub-100nm two-dimensional structures. Numerical simulation and physical modeling were used to correlate with the x-ray lithography replication results obtained by using synchrotron radiation and a commercial stepper worked at mask-sample gaps of 10μm and below.
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Tadashi Arai, Toshio Sakamizu, Kohji Katoh, Michiaki Hashimoto, Hirosh ...
1997 年 10 巻 4 号 p.
625-628
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
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Toshiyuki Yoshimura, Jiro Yamamoto, Hiroshi Shiraishi, Shou-ichi Uchin ...
1997 年 10 巻 4 号 p.
629-634
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
We describe how molecular-weight distributions of resist polymers and process control affect lithography for 0.1μm and below, especially for negative-type resists. There are two main issues for precise critical dimension (CD) control and high resolution in the region: microscopic pattern fluctuation caused by ultrasmall edge roughness in fabricated resist patterns (nano edge roughness); and pattern-size change due to acid diffusion in chemical amplification resists. We have found that nano edge roughness and acid diffusion can be suppressed by controlling the molecular-weight distributions of the base matrix polymers. It is also quite important to control process conditions to achieve high pattern fidelity with molecular-controlled resist materials. Multi-step post baking was applied to minimize the resist pattern deformation before dry etching. We have found that this process can suppress pattern size variations to within 10nm.
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Toru Yamaguchi, Hideo Namatsu, Masao Nagase, Kenji Yamazaki, Kenji Kur ...
1997 年 10 巻 4 号 p.
635-640
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
We investigate the linewidth fluctuation in resist patterns, which is a serious problem in electron beam nanolithography. Granular structures with a diameter of 20-30nm have been observed in resist films. We have determined that these structures cause the linewidth fluctuations. The granules are made up of polymer aggregates. We discuss the origin of the aggregates from the point that their size depends on the polymer molecular weight. We also show that linewidth fluctuation is reduced when the pattern size is less than the aggregate size. The linewidth dependence of the linewidth fluctuation can be explained by the influence of the resist polymer aggregate on the development behavior.
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Yukinori Ochiai, Shoko Manako, Jun-ichi Fujita, Eiichi Nomura
1997 年 10 巻 4 号 p.
641-646
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
The resolution of organic resists has been investigated as a function of base resin structure and molecular weight. Calixarene, which has a ring structure, and polystyrene, which has a chain structure, were used for the investigation. The polystyrene had different molecular weights. We show that a high-resolution lithography can be achieved using a organic resist with a low molecular weight, that is, a smaller molecular size. A 10-nmter level negative resist pattern is demonstrated.
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Tetsuya Tada, Toshihiko Kanayama
1997 年 10 巻 4 号 p.
647-650
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
Nanometer scale patterns have been fabricated using evaporated films of C
60 and its derivative, C
60(CH
2)
2(C
10H
6), as negative type electron beam (e-be am) resists. E-beam irradiation reduces the dissolution rate of the films in organic solvents such as monochlorobenzene. In addition, the rate of thermal sublimation in vacuum is also reduced by the exposure. These molecules have quite similar resist properties. They exhibits good resolution and high dry-etch durability. The performance of the resists was demonstrated by defining about 20nm dot patterns in the resist films and fabricating Si nanopillars, about 20nm in diameter and 100nm high, by subsequent plasma etching. The results of optical measurements suggest that the exposure mechanism of C
60 resist may be due to destruction of the molecules by e-beam irradiation.
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T. Ishii, H. Nozawa, T. Tamamura
1997 年 10 巻 4 号 p.
651-656
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
We have recently proposed a nanocomposite resist system that incorporates sub-nm size fullerene C
60 molecules into a conventional resist material. This new resist system leads to a substantial improvement of the various aspects of resist performance necessary for nanometer pattern fabrication with no significant process change. Fullerene (C
60) is found to be an excellent material for incorporation in view of its molecular size, etching resistance, and composite preparation capability. This paper describes the basic characteristics of nanocomposite resist systems of C
60 and two conventional electron-beam positive resists, polymethyl methacrylate (PMMA) and a highly etching durable resist, ZEP520. Further, improvement of the environmental stability of a C
60-incorporated chemically amplified negative resist, SAL601, and a positive one, SEPR-44-D, is also discussed.
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Shinzo Morita, Shinji Ogawa, Tomoya Yamada, Ryoichi Inanami
1997 年 10 巻 4 号 p.
657-660
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
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Hiroyuki Sugimura, Nobuyuki Nakagiri
1997 年 10 巻 4 号 p.
661-666
発行日: 1997年
公開日: 2006/08/04
ジャーナル
フリー
We report the preparation of organosilane monolayers by means of chemical vapor deposition and scanning probe lithography (SPL) using these monolayers as resists. Two types of monolayers having different alkyl groups, that is, trimethylsilyl [(CH
3)
3Si-, TMS] and octadecylsilyl [CH
3(CH
2)
17Si-, ODS] monolayers, were deposited on Si substrate from precursor molecules of hexamethyldisilazane [(CH
3)
3Si-NH-Si(CH
3)
3, ] and octadecyltrimethoxysilane [CH
3(CH
2)
17Si(OCH
3)
3], respectively. The thicknesses of these monolayers as estimated by ellipsometry were 0.4 and 2.0nm, respectively, and, therefore, were concluded to be defined by their alkyl chain lengths. Using an atomic force microscope (AFM) with an electrically conductive probe, a Si sample deposited with a TMS or ODS monolayer was patterned by flowing current through the AFM-probe/sample junction. The pattern thus fabricated on the monolayer was transferred to the substrate Si by chemical etching in an aqueous solution of NH
4F and H
2O
2. The etching proceeded area-selectively in the regions where the probe had passed, since, in these regions, the monolayer had been electrochemically degraded. The patterning was entirely accomplished through probe scanning without any need for further developing steps. The resist can thus be regarded as being self-developing. Both TMS and ODS successfully served as such SPL resists.
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