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Volume 15 (2002)
- Issue 5 Pages 715-
- Issue 4 Pages 535-
- Issue 3 Pages 351-
- Issue 2 Pages 159-
- Issue 1 Pages 3-
Volume 15, Issue 5
Displaying 1-9 of 9 articles from this issue
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Masamitsu Shirai, Kanji Suyama, Haruyuki Okamura, Masahiro Tsunooka2002 Volume 15 Issue 5 Pages 715-730
Published: 2002
Released on J-STAGE: August 04, 2006
JOURNAL FREE ACCESSNovel photosensitive polymers using photoacid and photobase generators are described. As photosensitive polymers using photoacid generators, two topics on i) copolymers of methacrylonitrile that are transparent at 157nm and promising as F2 resists and ii) photocrosslinkable polymers with thermally degradable units from the eviwpoint of recycling of photosensitive polymers are picked up. Subjects of photosensitive polymers using photobase genrators are i) photochemistry of oxime derivatives and onium salts and their use for design of novel photosensitive polymers and ii) polymeric photobase generators and their applications. The contents in this review include topics from basic concepts to up-to-date technology.View full abstractDownload PDF (2174K) -
Adam R. Pawloski, Paul F. Nealey, Will Conley2002 Volume 15 Issue 5 Pages 731-739
Published: 2002
Released on J-STAGE: August 04, 2006
JOURNAL FREE ACCESSThe photoacid generation efficiency of six photoacid generators was measured upon exposure to 157nm light in a candidate polymer for 157nm resist formulations of poly(NBHFA-co-NBTBE) using a standard addition technique. The photoacid generators studied were triphenylsulfonium perfluoro-1-butanesulfonate (TPS-Nf), bis(4-tert-butylphenyl)iodonium trifluoromethanesulfonate (BBI-Tf), bis(4-tert-butylphenyl)iodonium perfluoro-1-butanesulfonate (BBI-Nf), bis(4-tert-butylphenyl)iodonium perfluoro-1-octanesulfonate (BBI-PFOS), N-hydroxy-5-norbomene-2, 3-dicarboximide perfluoro-1-butanesulfonate (NDI-Nf), and bis(2-trifluoromethyl-6-dinitrobenzyl) 1, 3-benzene sulfonate (TFMDNBS). For the four ionic salts the photochemical efficiency was in the order BBI-Nf>BBI-Tf> BBI-PFOS>TPS-Nf. The photoacid generators NDI-Nf and TFMDNBS exhibited extremely poor efficiency for photoacid generation in this resist system under exposure to 157nm radiation.View full abstractDownload PDF (1550K) -
Motoyoshi Hatada, Yoshito Sakamoto, Akisato Katanosaka2002 Volume 15 Issue 5 Pages 741-747
Published: 2002
Released on J-STAGE: August 04, 2006
JOURNAL FREE ACCESSColoration of pentacosadiynoic acid (PDA) dispersed in polyalkylacrylate layer (color indicator layer) by gamma and UV irradiations has been studied comparatively in an attempt to obtain basic data for development of radiation color indicator of high sensitivity useful at low dose region (below 50 Gy) where the irradiation is carried out to suppress immunity in blood transfusion. Dispersion of PDA at high concentration in polyalkylacrylate layer gives a color indicator sensitive enough for this purpose. A small positive dose rate dependence and large temperature effect were observed on the reaction rate.View full abstractDownload PDF (897K) -
D. W. Johnson, D. J. Nawrocki, R. Ruhmann2002 Volume 15 Issue 5 Pages 749-756
Published: 2002
Released on J-STAGE: August 04, 2006
JOURNAL FREE ACCESSSU-8 Resists are used widely in the development and fabrication of MEMS devices [1-4]. The resist's images are the product of photochemical and thermal cationic processes and result in vertical sidewalls and high aspect ratio features. These are among SU-8's most desirable attributes. As applications using SU-8 move into production, reproducibility and purity of the materials becomes of major importance. In most resist systems the resin is the major cause of batch to batch inconsistency. In SU-8, the photoacid generator has been the primary reason for the resist variation. The PAG used in the standard formulation is a sulfonium salt widely used in industrial applications. However, it is a multi component mixture and the composition varies widely from batch to batch. Metal ion contamination is also a concern as the PAG contains a metal ion which could be deleterious to semiconductor devices.
This work allowed us to identify single component PAG structures having acceptable lithographic performance compared to standard SU-8 resist. All PAGs identified show lower sensitivity compared to the mixed triarylsulfonium salt currently used. No usable metal ion free PACs were found, however.View full abstractDownload PDF (1501K) -
Akira Kawai, Daisuke Inoue2002 Volume 15 Issue 5 Pages 757-758
Published: 2002
Released on J-STAGE: August 04, 2006
JOURNAL FREE ACCESSDownload PDF (349K) -
Akira Kawai2002 Volume 15 Issue 5 Pages 759-760
Published: 2002
Released on J-STAGE: August 04, 2006
JOURNAL FREE ACCESSDownload PDF (353K) -
Yukihito Matsuura, Satoshi Miura, Hiroyoshi Naito, Hiroshi Inoue, Kimi ...2002 Volume 15 Issue 5 Pages 761-764
Published: 2002
Released on J-STAGE: August 04, 2006
JOURNAL FREE ACCESSDownload PDF (611K) -
Toyofumi Shinozuka, Masahiro Tsunooka, Toshiro Itani, Masamitsu Shirai2002 Volume 15 Issue 5 Pages 765-768
Published: 2002
Released on J-STAGE: August 04, 2006
JOURNAL FREE ACCESSDownload PDF (551K) -
Mari Ishihara, Kenji Okumoto, Yasuhiko Shirota2002 Volume 15 Issue 5 Pages 769-773
Published: 2002
Released on J-STAGE: August 04, 2006
JOURNAL FREE ACCESSThe effect of annealing of organic thin films on charge injection in the tris(8-quinolinolato)aluminium (Alq3)-based organic electroluminescent (EL) devices was investigated. The external quantum and luminous efficiencies were found to improve by annealing. The investigation of the effect of annealing on charge injection in hole-only and electron-only devices has revealed that while hole injection from the ITO electrode into the hole-transport layer is not affected by the annealing, electron injection from the MgAg electrode into the Alq3 layer is enhanced by the annealing. It is concluded that improved charge balance due to the enhanced electron injection by the annealing is responsible for the improvement of the performance of the organic EL device.View full abstractDownload PDF (755K)
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