巻号一覧
26 巻, 12 号
選択された号の論文の12件中1～12を表示しています
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鴨下 源一, 北田 正弘1975 年 26 巻 12 号 p. 576-581
発行日: 1975/12/01
公開日: 2009/10/30
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金野 英隆, 永山 政一1975 年 26 巻 12 号 p. 582-587
発行日: 1975/12/01
公開日: 2009/10/30
ジャーナル フリーCathodic current-potential curves were measured for copper electrode in copper pyrophosphate solutions at a pH of 8.5. The deposited copper was examined by means of electron probe microanalysis, scanning electron microscopy and X-ray diffraction techiniques. The cathodic polarization characteristics revealed. that the amount of pyrophosphate ion adsorption decreases with increasing cathodic polarination and it becomes almost zero beyond the critical potential of Eb (ca. -0.75V vs. SCE). As could be expected, the phosphorus content in the deposit was relatively high (0.07-0.05%) in the potential region I which is less negative than Eb, and it was low (-0.02%) in the region II which is more negative than Eb. Smooth, semibright deposits were always obtained when the potential was in the region I and current was larger than about 5mA/cm2. The smooth deposit exhibited random orientation and main peaks were of (111), (200), (220) and (311). On the contrary, rough deposits obtained in the region II showed strong preferred (220) orientation and it is consistent with the preferred orientation theory. The deposition of a semibright layer in the region I is explained as being due to the pyrophosphate adsorption which prevents the surface migration of ad-atoms (or ad-ions) and hence the preferred orientation of crystals.抄録全体を表示PDF形式でダウンロード (1712K) -
武井 たつ子1975 年 26 巻 12 号 p. 588-591
発行日: 1975/12/01
公開日: 2009/10/30
ジャーナル フリーMany lumps and cracks were observed on the surfaces of nickel electrodeposited from Ni(CF3COO)2-halide-MeOH bath at low current densities (e.g. 1-6A/dm2) and at low bath temperatures (e.g. 30°C); the deposited layer was of granular structure. It was also found that chlorine, bromine, potassium, and nitrogen were included in the nickel deposit obtained from Ni(CF3COO)2-MeOH bath contaming chloride, bromide, potassium and ammonium salt, respectively.抄録全体を表示PDF形式でダウンロード (1910K) -
錯化剤が存在しない場合尾形 幹夫1975 年 26 巻 12 号 p. 592-596
発行日: 1975/12/01
公開日: 2009/10/30
ジャーナル フリーExperiments were carried out to find the mechanism of galvanic displacement: Fe+Cu2+→Fe2++Cu. When iron is immersed in a concentrated copper sulfate solution, e.g., 0.5M, a poorly adherent copper is deposited. In this case FeSO4 or Fe2O3 coprecipitated with the copper because the concentration of Fe2+ near the interface increased rapidly immediately after the immersion. However, atyell adherent copper was deposited by immersion in an acidic dilute copper sulfate solution, e.g., 0.01M, pH 1.5. In this case the rate of copper deposition, namely, the rate of formation of Fe2+ was slow, so that the Fe2+ was permitted to diffuse into the bulk of the solution without precipitating, which was the case of well adherent copper plate. The formulation of immersion plating of copper on iron was: CuSO4 0.0025-0.03M, pH<2.5, room temperature, immersion time 0.5-15min. The copper plating applied under these conditions was adherent to iron, hence copper could be electroplated on it from the ordinary pyrophosphate baths.抄録全体を表示PDF形式でダウンロード (685K) -
佐藤 正壽, 佐藤 栄一1975 年 26 巻 12 号 p. 597-601
発行日: 1975/12/01
公開日: 2009/10/30
ジャーナル フリーThe anodic behavior of tantalum in phosphoric acid solutions has been investigated by measuring AC impedance at the metal-solution interface and also by AES analysis of the anodic film. Anodic polarization caused an increase in direct current and AC resistance at 108Hz, but a decrease in capacitance and tan δ. These data indicate that an insulating film having a growth ratio of 12Å/V was formed with potential increase. The AES analysis revealed that the tantalum oxide film anodized in 0.1M/l H3PO4 includes P ions as deep as the half of the film thickness; in the film anodized in more concentrated phosphoric acid solutions, P ions were found to penetrate deeper than in the above film. Concerning the behavior of P ions in the film there were no differences between phosphoric acids of the first and of the third dissociation. Film growth took place both at the interface of metal/oxide and of oxide/electrolyte. The oxide film, therefore, is supposed to consist of three layers, that is, two layers with and without P ions and a tantalum excess oxide layer.抄録全体を表示PDF形式でダウンロード (629K) -
山下 嗣人1975 年 26 巻 12 号 p. 602-603
発行日: 1975/12/01
公開日: 2009/10/30
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1975 年 26 巻 12 号 p. 609a
発行日: 1975年
公開日: 2009/10/30
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1975 年 26 巻 12 号 p. 609b
発行日: 1975年
公開日: 2009/10/30
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1975 年 26 巻 12 号 p. 609c
発行日: 1975年
公開日: 2009/10/30
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1975 年 26 巻 12 号 p. 609d
発行日: 1975年
公開日: 2009/10/30
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1975 年 26 巻 12 号 p. 609e
発行日: 1975年
公開日: 2009/10/30
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1975 年 26 巻 12 号 p. 609f
発行日: 1975年
公開日: 2009/10/30
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