Auger electron and infrared reflectance spectra have been measured for the tantalum oxide films anodized in phosphoric acid solution to investigate the film structure. Regardless of the types of dissociated species, only phosphate was detected up to a half of the films formed in 0.1M phosphoric acid solution. When tantalum was anodized in phosphoric acid after anodization in nitric acid two different types of behavior were observed, depending on whether the second anodizing voltage was higher or lower. At higher voltage, phosphate was detected in the film, whereas at lower voltage no phosphate was detected. Thus it was found that phosphate was incorporated in the films only when the new anodic film was formed. In view of the results of IRRS of tantalum anodic oxide films, surface of which was removed by Vermilyea's acid, 1, 110cm
-1 band would be assigned to be PO
4. Relative value of 925cm
-1 and 850-860cm
-1 bands changed to some extent with increasing etching time. This phenomenon will result from the plural layer structure. The film consists of tantalum oxide with or without phosphate and tantalum excess oxide. From these results the mechanism of film growth explaining the phosphate distribution is discussed.
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