In order to disperse SnO
2 nanoparticle on SiO
2 substrate surface, reaction control of SnO
2 precursor, consideration of interaction between the precursor and SiO
2 surface, and formation of homogeneous reaction field on the SiO
2 substrate were attempted. Starting from SnCl
4 (aq) provides SnO
2 single nanoparticles deposited on SiO
2 through adsorption of Sn
4+ on SiO
2 surface during separation into SiO
2 cake and un-reacted SnCl
4 (aq) by filtration. SnCl
4 (aq) remains in small spaces in SiO
2 aggregates and can be passed fast by large spaces among the aggregates. While, dispersed SiO
2 nanoparticles makes uniform cake where SnCl
4 (aq) penetrates without residues. After calcinations of both composites, inhomogeneous SnO
2 depositions covered over silica aggregates while fine SnO
2 nanoparticle deposited on each silica surface. When NH
3 (aq) added in SnCl
4 (aq), fast growing of SnO
2 through Sn(OH)
4 occurs separately from silica surface due to little interaction between Sn(OH)
4 and silica. A chelate solution of SnCl
4 (aq) and acetylacetnate provided uniform SnO
2 nanoparticle on silica surface even silica substrate aggregates. Because interaction between chelate and silica surface, steric hindrance derived from chelate ligand, could prevent from aggregation of the deposited SnO
2 nanopaticle.
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