The C-MOS crystal oscillator has been used in the fields of timepiece and other electronics devices for consuming low electric power. Although its electric behavior is obtained in room temperature, the oscillation frequency-temperature characteristic has been scarcely reported. It is shown in this paper that the C-MOS crystal oscillator is investigated experimentally in temperature range from 0℃ to 60℃ changing both externally connected condensers, i.e.the qate capacitor (C_g) and the drain one (C_d). If the adequate values of C_g and C_d are selected at the appropriate ratio of C_g to C_d, it is found experimentslly that the oscillation frequency-temperature behaviors of C-MOS crystal oscillator agree to the resonance frequency-temperature one of quartz crystal unit within 0.5 parts per million. The oscillation frequency, moreover, is unchangeable even if the supply voltage is varied from 3 volt to 4 volt in the case of the mentioned above adequate values of capacitors. The reproducibility of mentioned above characteristics is studied by using another C-MOS. It is recognized that the reproducibility is within 0.3 parts per million about frequency-temperature behavior and also within 0.4 p.p.m. about frequency-supply voltage one. The long term oscillation frequency stability of the C-MOS crystal oscillator, which is composed of the adequate values of capacitors, has been measured extend over 80 days.
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