IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Volume E93.C, Issue 2
Displaying 1-9 of 9 articles from this issue
Regular Section
  • Yoshihiro MAKIMOTO, Hitoshi HIURA, Nobuo GOTO, Shin-ichiro YANAGIYA
    Article type: PAPER
    Subject area: Optoelectronics
    2010 Volume E93.C Issue 2 Pages 157-163
    Published: February 01, 2010
    Released on J-STAGE: February 01, 2010
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    In photonic label routing networks, recognition of optical labels is one of the key functions. We have proposed passive waveguide-type devices for recognition of optical labels coded in quadri-phase-shift-keying (QPSK) form. In this paper, we consider wavelength dependence of the devices. The basic module of the proposed device consists of a 3-dB directional coupler, two Y-junctions, and an asymmetric X-junction. The Y-junction and an asymmetric X-junction have basically no wavelength dependence. Although the 3-dB directional coupler has weak wavelength dependence, the device for two-symbol label recognition is found to work in wavelength 1.5-1.6µm. The performance of the device is confirmed by simulation using beam propagation method (BPM).
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  • Yuxiang YUAN, Yoichi YOSHIDA, Tadahiro KURODA
    Article type: PAPER
    Subject area: Electronic Circuits
    2010 Volume E93.C Issue 2 Pages 164-171
    Published: February 01, 2010
    Released on J-STAGE: February 01, 2010
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    A wireless power link utilizing inductive coupling is developed between stacked chips. In this paper, we discuss inductor layout optimization and rectifier circuit design. The inductive-coupling power link is analyzed using simple equivalent circuit models. On the basis of the analytic models, the inductor size is minimized for the given required power on the receiver chip. Two kinds of full-wave rectifiers are discussed and compared. Various low-power circuit design techniques for rectifiers are employed to decrease the substrate leakage current, reduce the possibility of latch-up, and improve the power transmission efficiency and the high-frequency performance of the rectifier block. Test chips are fabricated in a 0.18µm CMOS process. With a pair of 700 × 700µm2 on-chip inductors, the test chips achieve 10% peak efficiency and 36mW power transmission. Compared with the previous work the received power is 13 times larger for the same inductor size [7].
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  • Giuseppe CARUSO, Alessio MACCHIARELLA
    Article type: PAPER
    Subject area: Electronic Circuits
    2010 Volume E93.C Issue 2 Pages 172-181
    Published: February 01, 2010
    Released on J-STAGE: February 01, 2010
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    In this paper, a design methodology for the minimization of various performance metrics of MOS Current-Mode Logic (MCML) circuits is described. In particular, it allows to minimize the delay under a given power consumption, the power consumption under a given delay and the power-delay product. Design solutions can be evaluated graphically or by simple and effective automatic procedures implemented within the MATLAB environment. The methodology exploits the novel concepts of crossing-point current and crossing-point capacitance. A useful feature of it is that it provides the designer with useful insights into the dependence of the performance metrics on design variables and fan-out capacitance. The methodology was validated by designing several MCML circuits in an IBM 130nm CMOS process.
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  • Myounggon KANG, Ki-Tae PARK, Youngsun SONG, Sungsoo LEE, Yunheub SONG, ...
    Article type: PAPER
    Subject area: Electronic Circuits
    2010 Volume E93.C Issue 2 Pages 182-186
    Published: February 01, 2010
    Released on J-STAGE: February 01, 2010
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    A new low voltage operation of high voltage switching technique, which is capable of reducing leakage current by an order of three compared to conventional circuits, has been developed for sub-1.8V low voltage mobile NAND flash memory. In addition, by using the proposed high voltage switch, chip size scaling can be realized due to reduced a minimum required space between the N-wells of selected and unselected blocks for isolation. The proposed scheme is essential to achieve low power operation NAND Flash memory, especially for mobile electronics.
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  • Takao KIHARA, Toshimasa MATSUOKA, Kenji TANIGUCHI
    Article type: PAPER
    Subject area: Integrated Electronics
    2010 Volume E93.C Issue 2 Pages 187-199
    Published: February 01, 2010
    Released on J-STAGE: February 01, 2010
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    Previously reported wideband CMOS low-noise amplifiers (LNAs) have difficulty in achieving both wideband input impedance matching and low noise performance at low power consumption and low supply voltage. We present a transformer noise-canceling wideband CMOS LNA based on a common-gate topology. The transformer, composed of the input and shunt-peaking inductors, partly cancels the noise originating from the common-gate transistor and load resistor. The combination of the transformer with an output series inductor provides wideband input impedance matching. The LNA designed for ultra-wideband (UWB) applications is implemented in a 90nm digital CMOS process. It occupies 0.12mm2 and achieves |S11| < -10dB, NF < 4.4dB, and |S21| > 9.3dB across 3.1-10.6GHz with a power consumption of 2.5mW from a 1.0V supply. These results show that the proposed topology is the most suitable for low-power and low-voltage UWB CMOS LNAs.
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  • Jae Kwang LIM, Heung-Sik TAE, Dong-Ho LEE, Kazuhiro ITO, Jung Pil PARK
    Article type: PAPER
    Subject area: Electronic Displays
    2010 Volume E93.C Issue 2 Pages 200-204
    Published: February 01, 2010
    Released on J-STAGE: February 01, 2010
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    Unlike the conventional plasma-TVs using the driving circuit with two polarities during the reset and address periods, the cost-effective driving circuit using only the positive voltage level during the reset and address periods is proposed and implemented in the 42-in. plasma-TV.
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  • Haiyan JIN, Li JIAN, Guangjun WEN
    Article type: LETTER
    Subject area: Microwaves, Millimeter-Waves
    2010 Volume E93.C Issue 2 Pages 205-207
    Published: February 01, 2010
    Released on J-STAGE: February 01, 2010
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    In this letter, a broadband coupler is presented that makes use of a half mode substrate integrated waveguide (HMSIW) technique using a printed circuit board process. The coupler is realized by a parallel HMSIW line which couples energy by magnetic field. Compared with micro-strip coupler and conventional HMSIW coupler, it has lower loss and better Electromagnetic Compatibility owning to the closed field structure. Compared with SIW coupler, it has smaller size and lower cost owing to the half TE10 model. The coupler is simulated and measured at 8-12GHz. Measured results show a good agreement with simulation.
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  • Depeng JIN, Guofei ZHOU, Yong LI, Shijun LIN, Li SU, Lieguang ZENG
    Article type: LETTER
    Subject area: Electronic Circuits
    2010 Volume E93.C Issue 2 Pages 208-210
    Published: February 01, 2010
    Released on J-STAGE: February 01, 2010
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    The LC-based Digitally Controlled Oscillator (DCO) is one of the most important components of all digital phase locked loops. The performance of the loops is significantly determined by the DCO's frequency resolution. In order to enhance the frequency resolution, we propose a mismatched capacitor pairs based digitally controlled switched capacitance array, which dramatically reduces the minimum switched varactor capacitance. Furthermore, we implement a DCO based on our proposal in SMIC 0.18µm and conduct simulation in Spectre. The simulation results show that the frequency resolution is enhanced compared with the existing methods.
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  • Hayato TAKAHASHI, Naoya MURATA, Hitoshi MUGURUMA
    Article type: LETTER
    Subject area: Organic Molecular Electronics
    2010 Volume E93.C Issue 2 Pages 211-213
    Published: February 01, 2010
    Released on J-STAGE: February 01, 2010
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    Partial plasma polymerization for coexistence of hydrophobic/hydrophilic area in several ten micrometer size is the typical technique for protein patterning. A hydrophobic hexamethyldisiloxane plasma-polymerized film (HMDS PPF) was deposited on a glass substrate and this surface was partially modified by subsequent nitrogen plasma treatment (hydrophilic surface, HMDS-N PPF) with a patterned shadow mask. An antibody protein (F(ab')2 fragment of anti-human immunoglobulin G) was selectively adsorbed onto the HMDS-N area and was not adsorbed onto the HMDS area. Distinct 80× 80µm2 square spots surrounded by a non-protein adsorbed 80µm-wide grid were observed. Then, when the protein modified by fullerene was used, the reversible patterning was obtained. This indicated that the modification by fullerene changed the hydrophilic nature of F(ab')2 protein to hydrophobic one, as a result, the modified protein was selectively adsorbed onto hydrophobic area.
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