We report on International Electron Devices Meeting (IEDM) 1995,which was held in Washington, DC at December 10-13. First, the outline of IEDM is given. Then, each paper about image sensor technology is explained.
The trend of the image sensors and imaging technology reported in ISSCC96 are summurized. In this conference. Imaging tecnologies were reported and discussed 4 times, that is "Workshop on CMOS imaging Technology", plenary session, panel discussion and two general sessions. Among the conference, four CMOS sensors are reported from several points of view. while two CCDs are repoted.
1996年1月28日から2月2日にカリフォルニア州サンノゼにおいて開催されたIS&T(The Society for Imaging Science and Technology)とSPIE(The International Society for Optical Engineering)との共催によるプログラム"ELECTRIC IMAGING : SCIENCE & TECHNOLOGY"について報告する。
Near infrared photomultiplier tubes with the transfered electron photocathides have been developed in order to apply to not only the semiconductor field but also the biomedical fields. The newly developed photomultiplier tubes have higher sensitivity than the conventional photomultiplier tubes and faster time response than Ge pin photodiodes. Extreamly clear spectra were observed for the Si photoluminescence measurement and the singlet oxygen detection.
The floating field emitter including a photo-sensitive p-n junction is proposed and the possibility which a high-sensitive photoemission device can be realized, was confirmed from the experiment using equivalent circuit. The device could be fabricated usins a-Si : H pin photodiode. The photo-detection corresponding to the incident light flux was confirmed from the experimental characteristics.