Vacuum and Surface Science
Online ISSN : 2433-5843
Print ISSN : 2433-5835
Volume 62 , Issue 7
Special Feature : Transactions of the Annual Meeting on the Japan Society of Vacuum and Surface Science 2018 [II]
Showing 1-17 articles out of 17 articles from the selected issue
Preface
Special Feature : Transactions of the Annual Meeting on the Japan Society of Vacuum and Surface Science 2018 [II]
  • Ippei YAMADA, Norio OGIWARA, Yusuke HIKICHI, Junichiro KAMIYA, Michika ...
    Type: Regular article
    2019 Volume 62 Issue 7 Pages 400-405
    Published: July 10, 2019
    Released: July 10, 2019
    JOURNALS FREE ACCESS

    The non-destructive beam profile monitor is needed for high intensity accelerators to avoid radioactivation of the systems. A monitor system with sheet-shaped gas to measure two-dimensional (2-D) transverse beam profile nondestructively is under development. However, one of issues for realistic implementation of the monitor exists with non-uniform nature of the gas distribution. To obtain a correct beam profile, measurement of the gas distribution is indispensable because signal from the monitor is in proportional to both beam intensity and gas distribution. To measure the three-dimensional gas distribution, a system for analyzing the distribution of ions produced through gas interactions with beam has been developed. This system consists of an electron gun for producing ideal narrow beam, electrodes to form a parallel electric field toward micro-channel plate, and a phosphor screen. The experimental result by using a gas jet nozzle agreed well with the simulation.

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  • Takahisa ICHINOHE, Hideki OHNO
    Type: Regular article
    2019 Volume 62 Issue 7 Pages 406-410
    Published: July 10, 2019
    Released: July 10, 2019
    JOURNALS FREE ACCESS

    We fabricated non-doped titanium dioxide films using plasma-assisted deposition. According to X-ray diffraction (XRD) analyses, the crystal structures of as-grown films were almost amorphous without depending on the oxygen plasma concentration. The transmittance spectra showed about 60% transparency in visible light wavelength when the films were fabricated with 40%-O2 plasma, and then it was experimentally found to reveal lower resistivity than the other O2 concentrations. The resistivity obtained by present study were quite lower than the other reports in non-doped films as-grown. It is suggested that the conduction mechanism in the films can be attributed to the oxygen vacancy as considering the characteristics after post-annealing.

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  • —Phenomenon, Extension and Applications—
    Tsuyoshi TSUJIOKA
    Type: Current Topics
    2019 Volume 62 Issue 7 Pages 411-415
    Published: July 10, 2019
    Released: July 10, 2019
    JOURNALS FREE ACCESS

    Selective metal deposition on photochromic diarylethene (DAE) films, its extension and applications are introduced. Metal vapor is deposited on the colored DAE, but not on the colorless surface by vacuum evaporation. The core phenomenon of selective deposition phenomenon is metal atom desorption from the colorless DAE surface with a low glass-transition temperature, in which nucleation for metal film formation is suppressed. This phenomenon is not restricted to DAE films but a variety of organic films with a low glass transition temperature (Tg) are available. Selective metal-vapor deposition can be applied to various metal pattern formation in electronics and photonics fields. Metal-vapor integrated-deposition is demonstrated as a new function of low-Tg organic surfaces.

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  • Takahiro MARUYAMA, Makoto KUMAKURA, Takahiro SAIDA
    Type: Current Topics
    2019 Volume 62 Issue 7 Pages 416-420
    Published: July 10, 2019
    Released: July 10, 2019
    JOURNALS FREE ACCESS

    We performed in situ X-ray absorption near edge structure (XANES) measurements for Co and Ni catalysts during single-walled carbon nanotube (SWCNT) growth at 650℃. XANES results showed that both catalyst particles were reduced to metallic after heating at the growth temperature. After the ethanol gas irradiation started, Co catalysts became carbides, but Ni catalysts were kept metallic. These results were consistent with environmental transmission electron microscopy (TEM) observations and also a theoretical calculation.

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  • Shigehiko SASA, Kazuto KOIKE, Mitsuaki YANO, Toshihiko MAEMOTO
    Type: Current Topics
    2019 Volume 62 Issue 7 Pages 421-426
    Published: July 10, 2019
    Released: July 10, 2019
    JOURNALS FREE ACCESS

    Oxide semiconductors have various useful material properties such as a wide bandgap and capability of low temperature film formation and therefore can be formed on a glass or plastic substrate by sputtering or other methods. A thin film transistor is becoming its major application as a pixel driver for LCD or OLEDs. We focused on zinc oxide among oxide semiconductors and evaluated the electron transport properties using a single crystal heterostructure formed by MBE in order to evaluate the potential performance of ZnO based transistors. The devices showed high performance applicable to various applications. As a possible application of ZnO transistors, we also report applications to biosensors.

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  • Azusa N. HATTORI, Shohei TAKEMOTO, Haoyu YANG, Ken HATTORI, Hiroshi DA ...
    Type: Current Topics
    2019 Volume 62 Issue 7 Pages 427-432
    Published: July 10, 2019
    Released: July 10, 2019
    JOURNALS FREE ACCESS

    We have established the original methodology that enable to observe atomic orderings and arrangements of “surfaces with arbitrary directions” on 3D figured structures, by developing diffraction and microscopy techniques. An original technique, namely, the directly and quantitatively viewing of the side- and facet-surfaces in atomic scale using reflection high-energy electron diffraction (RHEED) and scanning tunneling microscope (STM), can feedback to the determination of process parameters in the etching procedure. The scientifically optimized etching recipe enabled the creation of atomically-ordered side-surfaces, which are perpendicular to planar substrate surfaces on 3D patterned Si substrates. RHEED and STM prove atomically-reconstructed Si{100}2×1, {110}16×2, and {111}7×7 side-surfaces that were realized for the first time. We have also developed the atomically-ordered 3D nanofabrication technique, where the material stacking direction is switched from the general out-of-plane to in-plane direction, and realized the formation ultra-thin epitaxial films in 3D space.

    Editor’s picks

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  • Naoto KAMEDA, Toshinori MIURA, Yoshiki MORIKAWA, Mitsuru KEKURA, Ken N ...
    Type: Current Topics
    2019 Volume 62 Issue 7 Pages 433-438
    Published: July 10, 2019
    Released: July 10, 2019
    JOURNALS FREE ACCESS

    We have succeeded in the formation of SiO2 and Al2O3 films at room temperature using a large amount of chemically active species produced after mixing high purity ozone gas and ethylene gas (OER) to be utilized in chemical vapor deposition process (OER-CVD) and atomic layer deposition process (OER-ALD), respectively. Although a SiO2 film was formed by OER-CVD at room temperature, it showed comparable characteristics to that conventionally formed at high temperature. The OER-CVD and the OER-ALD are expected to enable various kinds of oxide film deposition (e.g., TiO2, ZnO) at lower temperature.

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  • Tamae OMOTO, Shunsuke ASAHINA
    Type: Current Topics
    2019 Volume 62 Issue 7 Pages 439-442
    Published: July 10, 2019
    Released: July 10, 2019
    JOURNALS FREE ACCESS

    The cross sectional method with Ar ion beam is often used for Scanning Electron Microscopy (SEM). It is suitable for observation and analysis by SEM because of large process area with ultra clean surface. However, there are not many reports about cross sectioning for high resolution SEM using Ar ion beam due to the heating damage during the process. Recently, we have succeeded in developing a cooling system with Liquid Nitrogen (LN2) for Ar ion beam method, minimizing damage during cross sectional process. In this report, we introduce the effect of cross sectional method with Ar ion beam using LN2 cooling and application of high resolution SEM.

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Regular article
  • Hikaru HIDAKA, Yukio YOSHIMURA, Issei MANZEN, Atsushi NITTA
    Type: Regular article
    2019 Volume 62 Issue 7 Pages 443-447
    Published: July 10, 2019
    Released: July 10, 2019
    JOURNALS FREE ACCESS

    Recently, transparent conductive films used for flexible devices have been studied. Indium tin oxide, which is commonly used as a transparent conductive film material, has excellent electrical and optical characteristics. However, it has poor flexibility. Our group focuses on AZO/Ag/AZO multilayer films that are flexible and highly conductive. One disadvantage of AZO/Ag/AZO multilayer films is that interdiffusion at the AZO/Ag interface affects the optical characteristics. In this study, we discuss the effects of the deposition temperature on each layer. Depositing Ag at room temperature suppressed oxygen diffusion into Ag and improved the multilayer film's transmittance. Consequently, a AZO/Ag/AZO multilayer film with a resistivity of 1.15×10-4 Ω cm and an average transmittance of 80.2% was obtained.

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