We have investigated the electronic states of active and inactive dopant sites in Si-doped GaN using the X-ray absorption near-edge structure (XANES), Auger electron spectroscopy (AES), and photoelectron spectroscopy (PES). From AES and PES, it was found that Si-doped GaN contains Si3N4 and SiNx dopant states. According to Si K-edge XANES, the Si3N4 state does not exhibit electronic states in the GaN bandgap, indicating that these dopant sites in Si-doped GaN are inactive, whereas SiNx exhibited bandgap states. Thus, the SiNx state should act as an active dopant site in Si-doped GaN. The simulated XANES spectra accurately reproduce the electronic state in the GaN-bandgap where a Ga atom is replaced by a Si atom, suggesting that these are the active dopant sites. Inactive dopant sites (Si3N4) in Si-doped GaN are formed predominantly close to the surface. Since Ga vacancies are formed largely at sites close to the surface, it is apparent that the quantity of Ga atoms or its vapor should be optimized to prevent formation of Ga vacancies thus avoiding population of the inactive sites.

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