We propose high-low frequency Kelvin probe force spectroscopy using high- and low-frequency AC bias voltages to measure the interface state density inside semiconductors. We derive an analytical expression for the electrostatic force between the tip and the sample that takes into account the charge transfer between the bulk and interface states in the semiconductor. We show that the electrostatic force between the tip and the semiconductor sample strongly depends on the capacitance of the charge depletion region on the surface and that the analysis of the electrostatic force at low- and high-frequency AC bias voltages can provide information on the interface state density in the semiconductor band gap. We also demonstrate using a pn-patterned silicon substrate that the interface state density can be measured.

Nb has the highest superconducting transition temperature among elemental materials, which makes it a realistic choice for superconducting junctions. However, self-organized oxide structures on its surface impede the preparation of well-defined interface. Once the oxide structure is clarified, this oxidized surface may be used as an interface. Atomic force microscopy can distinguish different elements among ionic crystals depending on the charge state of the scanning probes. We applied this method to the oxide surfaces of Nb(110) for structural analysis and observed Nb and O atoms independently as well as simultaneously. A structural model was constructed based on the density functional theory. Additionally, the density of states and the Bader charge were analyzed.

A spectral imaging method using Auger electron spectroscopy (AES) was developed as a next-generation analytical technique. By adapting some new correction techniques, the spectrum containing multiple peaks, measured at arbitrary energy resolution for each pixel, is stored in cube data format. It is possible to form an intensity map by extracting spectra of any area from the spectra stored for each pixel.

This paper describes examples of high-energy-resolution measurements of semiconductor materials performed with this method.

We present a computational study of the electrochemical oxygen reduction reaction on single metal catalysts embedded in nitrogen-doped graphene, namely, TM-N₄-C (TM＝Fe, Co), using density functional theory calculations combined with the effective screening medium method and the reference interaction site model. We systematically investigated the roles played by solvent, electrolyte (pH), and electrode potential in the electrochemical oxygen reduction reaction on TM-N₄-C. Furthermore, by performing constant-potential calculations, we were able to obtain the limiting potentials/overpotentials, in better agreement with the experimental values than those obtained with the constant-charge (neutral) calculations, demonstrating the importance of the constant-potential calculations of the electrochemical reactions.

BeCu material has the characteristics of high thermal conductivity and low thermal emissivity, which can reduce temperature rise. Furthermore, BeCu material is able to reduce the outgassing with the special heat treatment. These characteristics make it easier to get a high vacuum. The surface structure of BeCu material was confirmed by X-ray photoelectron spectroscopy (XPS) analysis, the absorbed gas in the material was measured by thermal desorption spectroscopy (TDS), and the outgassing from the material were measured by a build-up test. These test results confirmed that BeCu material has excellent vacuum properties.

The joint committee for standardization of The Japan Society of Vacuum and Surface Science (JVSS) and Japan Vacuum Industry Association (JVIA) is working to resolve conflicts between three standards related to graphical symbols for vacuum technology : JIS Z 8207 corresponding to ISO 3753 (withdrawn), JIS Z 8617 series corresponding to ISO 14617 series, and DIN 28401, with the collaboration of Japan domestic committee for ISO/TC10. As the result, four amendments of JIS Z 8617, which includes graphical symbols specified in JIS Z 8207, were published in 2023. This review shows the difference of graphical symbols between JIS Z 8207 and JIS Z 8617 series including these amendments. Our activity to revise ISO 14617 series is also introduced.