In order to discuss chemical vapor deposition (CVD) and atomic layer deposition (ALD), it is necessary to understand chemical reactions. Part 3 of this course will explain actual reaction analysis and process control technologies for CVD and ALD. In this, Part 2, the basics of chemical reactions were explained for application to CVD and ALD.
First, the reasons for the need for chemical reaction analysis were explained. The shape and quality of the films are important factors in determining the rate-limiting process of a chemical reaction. Next, the definition of the reaction rate of CVD reactions was confirmed, and the existence of incubation time was explained. Selective CVD is explained as an application example that utilizes the existence of incubation time.
Furthermore, Arrhenius Plots, which are essential for analyzing chemical reactions, and how to calculate activation enthalpy (activation energy) were explained. Regarding Arrhenius Plots, practical plotting techniques that make reaction analysis easier were explained. The techniques explained here will be carried over to Part 3.
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