IN THIS PAPER, WE ANALYZED THE CONCEPT OF SO-CALLED CO-PARTNERSHIP HOUSING INVENTED BY HENRY VIVIAN(1868-1930) AT THE BEGINNING OF THIS CENTURY, BY PICKING UP THE BRENTHAM GARDEN SUBURB, WEST LONDON AS THE FIRST INNOVATIVE EXAMPLE. CHARACTERISTICS OF VIVIAN'S CONCEPTS ARE SUMMARIZED SUCH AS COMMUNITY-BASED APPROACH TO HOUSING FOR THE ECONOMICALLY WEAKER SECTION AND DWELLER'S PARTICIPATION TO THE WHOLE HOUSING PROCESS FROM PLANNING, BUILDING TO MANAGEMENT. AND VIVIAN'S APPROACH IS HIGHLY EVALUATED FROM THE RECENT THIRD WORLD HOUSING SITUATIONS.
The purpose of this study was to reduce the tuning time of the transmission shift feeling of an off-road dump truck. Recently, the clutch engagement timing of most off-road trucks is electronically controlled according to the acceleration of the engine or driving conditions to obtain a more comfortable shift feeling. In the tuning of an actual vehicle, however, it takes a long time to filld the optimum control parameters for the clutch pressure. In this study, parameter design was used to find optimum parameters that would give a good shift feeling consistently and with high robustness. The calculations in this study were carried out by a combination of in-house dynamic simulation software and iSIGHT. It was confirmed that the tuning time of an actual vehicle could be reduced to half the current tuning time with the optimum parameters obtained as a result of this parameter design study.
SiC merged reverse conductive (MRC) power devices composed of both unipolar devices and bipolar devices have been developed to achieve a smaller chip size, a lower power loss and a higher reliability. SiC MRC power devices such as SiC MRC-MOSFET and SiC MRC-IGBT can achieve this performance, but have the problems of on-voltage degradation and a large snap-back voltage. The former has been solved by the newly developed majority carrier heating-TEDREC (MaCH-TEDREC) method and the latter has been solved by both the newly developed double buffer device structure and novel standard cells with pilot IGBT.