The film structure and optical characteristics of Al, Cr or Co-doped silicon nitride films were studied. As the relationships between producing processes and the refractive index were studied, the refractive index was larger as the substitution ratio of metal element was higher and the nitrogen mixing ratio in the sputtering gas was lower. The magneto-optical disk characteristics were measured. On the disks using the Cr or Al-doped SiN
x films, the
C⁄
N was 1∼2 dB lower than that on the disk using the SiN
x film. On the disk using the Co-doped SiN
x film, the
C⁄
N was 9 dB lower than that on the disk using the SiN
x film. These results may be explained by the light absorption of the Co-doped SiN
x film. The bonding state of each element in the Al, Cr or Co-doped SiN
x film whose refractive index was 2.0∼2.1 was analysed by the ESCA method. The bonding state of Si in the SiN
x film was present as a mixture of 2∼3 states. The bonding state of Si in the (Si, Co)-N film was shifted to the lower bonding energy state and the higher bonding energy state. The bonding state of N in the (Si, Al)-N film showed the oxinitride peak. Cr and Al were in the nitride state, but Co existed as a mixture of nitride and metal. The section structures of these films were obtained by TEM. The SiN
x films and the Cr, Al or Co-doped SiN
x films were all amorphous. On the Cr-doped SiN
x film, a nearprismatic structure was observed, and on the Co-doped SiN
x film, corpuscles of 2∼5 nm diameter were observed. The inner streses of the SiN
x film and the (Si, X)-N (X=Cr, Al, Co) films produced by the reactive sputtering method were stress free.
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