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全文: "炭化珪素"
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  • 佐藤 純夫
    大日本窯業協會雑誌
    1942年 50 巻 592 号 178-186
    発行日: 1942/04/01
    公開日: 2010/04/30
    ジャーナル フリー
  • 川井 清水
    材料試験
    1955年 4 巻 20 号 97-100
    発行日: 1955/02/20
    公開日: 2009/05/26
    ジャーナル フリー
  • 沼田 喜光, 岸本 昭
    日本セラミックス協会 年会・秋季シンポジウム 講演予稿集
    2002年 2002F 巻
    発行日: 2002年
    公開日: 2003/10/30
    会議録・要旨集 フリー
    炭化珪素は優れた耐熱性·高強度を持つ高温構造材料と知られるほか、バンドギャップが2.0∼3.0eVと広いため化合物半導体として応用も考えられている。このため、高温用電子デバイスとしての利用が期待できる。我々は既に、炭化珪素多結晶体において単結晶体同様のピエゾ抵抗特性を持つことを報告している。しかし多結晶体においてその発現機構は、単結晶体のように単純ではなく炭化珪素が持つ様々な特性によっても大きく変化すると考えられる。今回はカプセルフリーな窒素雰囲気下において、熱間静水加圧焼結(HIP法)を用いて炭化珪素多結晶体を作製するとともに、そのピエゾ抵抗特性について評価した。
  • 鈴木 昇, 郷 豊, 馬場 憲之, 伊藤 二郎, 遠藤 敦, 宇津木 弘
    粉体工学会誌
    1991年 28 巻 11 号 670-678
    発行日: 1991/11/10
    公開日: 2010/04/30
    ジャーナル フリー
    The surface properties of silicon carbides pulverized in n-hexane and n-hexane solutions of cetanol or octadecyltriethoxysilane were investigated through their dispersive properties, by scanning electron micrographs (SEM), infrared absorption spectra, pyrolysis and the number of surface groups estimated from carbon contents and surface areas. The following were confirmed: (1) The surface nature of silicon carbide pulverized in n-hexane was hydrophilic and was similar to that of unpulverized silicon carbide. The surface nature of silicon carbide pulverized in an n-hexane solution of cetanol appeared to be hydrophilic, but it was hydrophobic in comparison with that of unpulverized silicon carbide. The surface nature of silicon carbide pulverized in an n-hexane solution of octadecyltriethoxysilane appeared to be hydrophobic (2) The pulverization was confirmed by SEM to proceed with increase in grinding time. (3) The characteristic absorption due to surface groups was observed in that of silicon carbide pulverized in n-hexane solutions of cetanol or octadecyltriethoxysilane. The vapors evolved by the pyrolysis of the surface group were observed. (4) The surface-treatment of silicon carbide was confirmed to be performed by pulverization in n-hexane solutions of cetanol or octadecyl-triethoxysilane. (5) The reaction mechanisms were confirmed to be,
  • 佐藤 純夫
    大日本窯業協會雑誌
    1943年 51 巻 609 号 566-572
    発行日: 1943/09/01
    公開日: 2010/04/30
    ジャーナル フリー
  • 岡田 民雄, 今城 守, 清水 行男
    鋳造工学 全国講演大会講演概要集
    2006年 148 巻 65
    発行日: 2006年
    公開日: 2017/08/15
    会議録・要旨集 フリー
  • 日下 純, 吉田 秀幸, 池内 健
    関西支部講演会講演論文集
    2000年 2000.75 巻 811
    発行日: 2000/03/16
    公開日: 2017/06/19
    会議録・要旨集 認証あり
    The authors investigated the wear property of AO (alumina)/AO and SC (silicon carbide)/SC coupling for artificial joint. In the reciprocating motion test, SC/SC shows statistically larger wear rate than AO/AO. The wear rates of both coupling, however, are small enough to be in mild wear stage. Surfaces are polished and maintain smoothness. In addition, SC/SC wear test in O_2rich environment was conducted. When the amount of dissolved oxygen (DO) is high, large wear caused by tribochemical oxidation is observed. But when DO is as low as saturation point under the atmospheric pressure, little wear is observed. As the DO of synovial fluid is lower than saturated, we think the large wear by tribochemical oxidation doesn't occur. From these results, improvement of mechanical wear resistance is important for ceramic/ceramic artificial joint.
  • 錦織 清治, 永田 重雄, 大西 正義
    電気製鋼
    1956年 27 巻 5 号 238-243
    発行日: 1956/09/30
    公開日: 2009/05/25
    ジャーナル フリー
  • 鈴木 弘茂
    窯業協會誌
    1960年 68 巻 777 号 210-221
    発行日: 1960/09/01
    公開日: 2010/04/30
    ジャーナル フリー
    This paper presents the results of the investigations on the effect of vanadium oxide on the oxidation of pure silicon oxide powder, since the former has proved to be most influential material for such action (J. Ceram. Assoc., Japan, 67 [6] 189 (1959)).
    V2O5 melts at 660°C and in order to investigate the wettability of the molten oxide against silicon carbide the change of contact angle by temperature as well as the penetrability of the molten liquid into the powder were measured.
    Through the measurement of the change of weight and by X-ray analysis of mixed powder heated in argon atmosphere the temperature dependency of the chemical reaction and its details were studied. From the results obtained the rate of reaction at 950° and 1150°C in oxygen stream was measured. Furthmore, through the measurement of the penetrability V2O5 into thedry-pressed silica powder, and of the pyrometric cone equivalent temperature of the mixture the author has tried to approach to the mechanism of chemical reaction.
    The results are summarised as follows:
    1) Large wettability of SiC with the melt from V2O5 in air as well as in argon atmosphere was confirmed. At the temperatures higher than the melting point the contact angle decreased rapidly approaching soon to practical zero value. No bubble at the interface was observed. Also, the melt denetrated rapidly into the pressed mass of the fine powder of SiC. Especially, the rate of penetration of the melt into the pressed silica powder was to be very high between the temperatures of 950° and 1150°C.
    2) V2O5 reacts with SiC in three steps in the atmosphere of argon, namely at 640°-670°C, 750-920°C and 1020°-1180°C-. It was confirmed that V2O5 was reduced to V2O4 in the second step, and to V2O3 in the third step. The temperature of the completion of the third step changed by the nature of V2O5, but not by the kind of SiC used. On the other hand, as V2O3 was oxidized to V2O5 through V2O4 at the temperatures as low as 500°C, and it may be concluded that the coexistence of O2 is to accelerate the rate of oxidation of SiC by V2O5 which naturaly will be influenced strongly by temperature.
    3) When V2O5+SiC mixture was heated to 900°C in argon and then O2 was introduced oxidation proceed very slowly at the begining, fast gradually, and again slowed down with time. This may be interpreted by assuming the fact that when SiO2, the reaction product of the oxidation of SiC, accumulate over ten per cent the migration of V+5 became difficult owing to the solidification of the melt. In this stage V2O4 is formed at the interface.
    4) When the same experiment was carried out at a higher temperature, 1150°C, two types of the reaction were observed, namely
    a) When all V2O5 was reduced to V2O3 the reaction rate was possible to be expressed by a second order equation, i.e. very high at the initial stage falling gradually with time.
    b) When most part was reduced to V2O4 the reaction represented by the equation.
    logΔr=kt+c,
    where Δr is the amount of the oxidized SiC measured by the thickness from the surface, t is the time, and k, c are constants.
    Taking a serious view of the roll played by SiO2 at the interface between the oxide film and the surface of SiC crystal the author discussed the mechanism of the oxidation of SiC with the mobility of V+5 in the system SiO2-V2O5 and the cone equivalent temperature.
  • 素木 洋一
    窯業協會誌
    1963年 71 巻 810 号 C305-C314
    発行日: 1963年
    公開日: 2010/04/30
    ジャーナル フリー
  • 砂川 一郎
    宝石学会(日本)講演会要旨
    2001年 23 巻
    発行日: 2001年
    公開日: 2003/04/23
    会議録・要旨集 フリー
    ダイヤモンドの類似石としてモアッサナイトの名前で炭化珪素SiCが売り出されたのは最近のことである。モアッサナイトのカット石には、中空の孔が普遍的に見られ、鑑別上の特徴の一つとされている。この種の中空孔がなぜ、モアッサナイトに見られるのかについて議論する。モアッサナイトは種結晶を使った、改良型レーリー法で合成される。これは、気相からの結晶育成法である。アチェソン法、レーリー法のいずれの合成法でも、炭化珪素の結晶が渦巻き成長機構により成長することは、古くから知られている。その発生源である転位はしばしば樹枝状結晶の樹枝の閉じこめ不整に由来し、大きなBurgers vectorをもつ。この種の転位の歪み場は大きく、転位芯に自由表面をつくらなければ歪みを解放できない。転位にともなわれる歪み場は渦巻き成長層の前進速度に影響を与え、ある臨海値以上では、前進速度の逆転が起こる。こうして、渦巻き成長層の中心部に中空の孔がうまれる。これにより、自由表面が創設され、歪みが解消されるからである。気相から成長した炭化珪素の結晶面上には、古くから渦巻き成長層の中心に凹みが観察されており、その成因がこのように理解されていた。モアッサナイトに普遍的に観察される中空孔もまったく同じ成因と考えてよい。発表では、炭化珪素(0001)面上に観察される渦巻き成長層と中心の孔に関する観察結果を紹介しながら、モアッサナイトの中空孔の成因について説明する。
  • 鈴木 弘茂
    窯業協會誌
    1959年 67 巻 762 号 189-195
    発行日: 1959/06/01
    公開日: 2010/04/30
    ジャーナル フリー
    As a part of the studies on the oxidation of silicon-carbide powders the oxidazability of Si and β-SiC, both found in the market products of silican carbide, as well as the influence of Fe2O3, Al2O3 and MgO on the oxidation of pure green silicon carbide were investigated. The results obtained are summarized as follows:
    (1) Although it was confirmed that metallic silicon was oxidized much easier than α-SiC, the small volume increase accompanied by the reaction would play no more roll than to reduce the SiC content as long as the silicon carbide is used as refractories.
    (2) β-SiC is fine powder showing a very slow oxidation compared favourably with α-SiC in this respect. Consequently, it showed no trend to become porous, since no volume increase occured even though it was exposed to oxidizing atmosphare for a long time. The contamination of β-SiC in raw material is not only harmless but rather favourable.
    (3) It was confirmed that Fe2O3 did not give any serious influence on the oxidation of SiC at a temperature lower than 1200°C, and that there was no appreciable volume increase even in contact with water vapour. At about 1400°C the reaction became violent, which however, did not continue long, showing that Fe2O3 is not so harmful an admixture as it is universally believed.
    (4) At all temperatures Al2O3 held back more or less the oxidation of SiC. It was observed that a violent oxidation occured at 1150°C under the coexistence of water vapour, accompanying large volume and porocity increase. It was thus confirmed that Al2O3 is an impurity to which we should use due precaution against its contamination.
    (5) MgO is an impurity accerelating the oxidation of SiC at the temperatures higher than 700°C, it is one of the most undesirable impurities.
    (6) The influence of oxides on the oxidation of SiC is governed:
    (a) by the stability discriminated by the free energy of the formation of oxides,
    (b) by the location of the melting points in the binary system [metal oxide]-SiO2,
    (c) by the reactivity of metal oxide with SiO2,
    (d) by the properties of the reaction products.
    Referring to the influence of the addition of Pb3O4, V2O5, and Li2CO3 on the oxidation of SiC such conditions as above were explained satisfactory.
    (7) The prolonged oxidation of SiC is governed mainly by the nature of the oxide film covering the crystal surface. The fact that even the pure green silicon carbide behaved like an ordinary black silicon carbide when mixed with Al2O3 or MgO may be attributed to the nature of accerelating the crystallization of amorphous silica to quartz and cristobaite.
  • 瀬高 信雄
    応用物理
    1970年 39 巻 11 号 1037-1038
    発行日: 1970/11/10
    公開日: 2009/02/09
    ジャーナル フリー
  • 田中 秀治, 中橋 和博, 江刺 正喜, 杉本 真也, 原 基揚, 釜土 敏裕
    IIP情報・知能・精密機器部門講演会講演論文集
    2000年 2000 巻
    発行日: 2000/03/24
    公開日: 2017/06/19
    会議録・要旨集 認証あり
    In this paper, studies on silicon carbide (SiC) micromachining and micromachined gas turbines are described : (1) SiC micro-reaction-sintering combined with silicon lost mold method has been developed, and SiC micro-rotors of 5 and 10 mm in diameter were fabricated. (2) Deep reactive ion etching (deep-RIE) of sintered SiC is being studied. To date, the etching depth of over 100 μm was achieved at the speed of 0.48 μ/min. using an inductively coupled plasma RIE system with SF_6 gas. (3) Silicon micro-air turbines for rotating an integrated grid polarizer have been fabricated, and the rotational speed of about 10000 rpm was achieved. (4) A computer fluid dynamics (CFD) program is under development for numerical fluid analysis inside micro-gas turbines. The airflow inside the abovementioned micro-air turbine was 2-dimensionally calculated.
  • 林 瑛
    鉱物学雜誌
    1960年 4 巻 5 号 363-371
    発行日: 1960/02/29
    公開日: 2009/08/11
    ジャーナル フリー
  • 角 健藏
    窯業協會誌
    1954年 62 巻 698 号 510-512
    発行日: 1954/07/15
    公開日: 2010/04/30
    ジャーナル フリー
  • 山内 俊吉, 鈴木 弘茂
    窯業協會誌
    1953年 61 巻 2Supplement 号 16-18
    発行日: 1953年
    公開日: 2010/04/30
    ジャーナル フリー
  • 鈴木 弘茂
    窯業協會誌
    1959年 67 巻 761 号 157-164
    発行日: 1959/05/01
    公開日: 2010/04/30
    ジャーナル フリー
    The green silicon carbide powder of classified and purified grains was oxidized at 1200°C by the mixture of water vapour and oxygen in the volume ratios of H2O: O2=25:75, 50:50, 75:25, 90:10, and also by steam containing 10% of nitrogen (>99.99%). The degree of oxidation was measured by weight increase, from which the oxidation ratio was worked out.
    Similar experiments were carried out at 1000° and 1400°C using the mixture 50:50 to compare the results with those of the oxidation by dry oxygen (J. Ceram. Assoc., Japan, 65 [736] 88, 1957), and to discuss the role of water vapour.
    To investigate the influence of the colour and polytype composition of silicon carbide crystals the samples, home and foreign origin, were subjected to the similar experiments, i.e., the oxidation at 1000°, 1200° and 1400°C for long hours by dry oxygen, and also by the 50:50 mixture. Especially, those oxidized at 1200°C were put to the tests such as X-ray analysis, dilatometry, and the observation of thin section under microscope.
    The results are summarized as follows:
    (1) Silicon carbide powder was oxidized strongly by water vapour containing oxygen when heated above 1000°C. At comparatively lower temperatures the powder was sintered, while at such a high temperature as 1400°C it was swollen to a porous mass caused by the increase of oxidation velocity. Up to 90 vol.% the increasing steam content accelerated the reaction velocity.
    (2) The same formula as before, {R0(1-3√1-x)}N=Kt, the rate of oxidation with dry oxygen, where R0 is the average radius, x the oxidation ratio, t the time, and N and K are constants, was established. The value of K increased and N decreased with increasing temperature.
    (3) Generally, the colour and the polytype composition of the powder exerted no appreciable influence on the function of dry oxygen.
    (4) In the current of 50:50 mixture, a marked difference was observed between the oxidation at 1200°C of the green and greenish black powders, containing, respectively, more than 83 and 74% of 6 H type, and of the black and dark grey domestic products, each containing more than 47 and 52% 4 H type. Especially, the silica formed by the oxidation of the black powder turned comparatively early to cristobalite which developed to form a porous mass. In this case the rate was represented by the first order equation.
    (5) An infinitesimal quantity of impurity contained in above samples would lower the temperature of crystallization, of silica which together with the acceleration of the velocity of crystal growth by water vapour, would be the most important source of bringing about such a difference in the oxidation characteristics.
  • 磯村 浩介, 田中 秀治
    ターボ機械
    2000年 28 巻 9 号 528-535
    発行日: 2000/09/10
    公開日: 2011/07/11
    ジャーナル フリー
  • 島田 洋, 広岡 敏夫
    鋳物
    1961年 33 巻 12 号 853-860
    発行日: 1961/12/25
    公開日: 2012/10/29
    ジャーナル フリー
      For a practical application of the water-cooled cupola, we have studied the continuous acid operation with midnight banking of fire, making a series of experiments on a 2 ton water-cooled cupola.
      The results are as follows:-
      1. It is very important in continuous operation to keeo it stable for a long time. The construction of the cupola, therefore, should be different from the usual one. The shell around the melting zone is to be lined with highly anti-corrosive refractories, and the tuyere should be designed as to send the blast to the centre of cupola, while the basin should be made as shallow as possible, in order to avoid the molten metal to be cooled and the slag may be easily cleaned out by the blast.
      2. When the cupola is lined with high silicon carbide (SiC 80%, porosity 16%) refractory of 60mm thickness, a stable operation can be maintained for more than 30 hours or 6 days. The retractory proposed is neither oxidizable, nor corrodible. The effect of water-cooling makes the heat conductive refractory more endurable, while the inside of cupola is not so cooled by the endurable refractory.
      3. The contents of slag are almost the same every day, and those of metal are also invariable in continuous operation particularly by applying high grade refractory mentioned above. The slag control is easy and better products are obtained.
      4. The high silicon carbide refractory, though it costs obout 15 times of the usual one, never makes the melting cost more expensive, if the cupola operation is repeated at least two terms of 6 days.
      5. The continuons operation is reasonably stabilized as above. So, after automatic ignition at the start continuous operation, will go on automatically with no difficulties.
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