Nowadays,
CMOS
devices are widely used in LSIs. For higher degree of integration of semiconductor devices, the distance between nMOS and pMOS in
CMOS
must be decreased. However, in bulk
CMOS
, nMOS and pMOS are not completely insulated. Therefore, decrease of the distance between nMOS and pMOS in bulk
CMOS
leads to the interaction between two MOSFETs. To decrease the distance between two MOSFETs in bulk
CMOS
, the interaction phenomena between nMOS and pMOS in bulk
CMOS
should be investigated. In this research, we report our experimental work of
CMOS
inverter. We fabricated
CMOS
inverters, in which the distance between two MOSFET is changed. We measured the drain current under several voltage conditions. The experimental results show, in the case that the distance between two MOSFET in bulk
CMOS
is decreased, the current of each MOSFET is dependent only on drain voltage and we cannot control the current by the gate voltage.
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