Abstract
Radio frequency glow discharge (rf-GD) is being used as a luminous optical device for the analysis of thin-film samples. A depth analysis and an element analysis are purposes. The Ar+ ions that occur in the rf-GD provide irradiation energy (<50 eV) and ion electric current (∼100 mA/cm2). As for the Ar+ ion by rf-GD, damage to the sample is less than the detection lower limit of the main way of detecting it. Then, an influence on the material is minimum. On the other hand, it has a unique nature of high-speed Ar+-ion sputtering. Observations at a in the low acceleration voltage of 1∼1.5 kV are possible recently with a scanning electron microscope (SEM) by loading feild emission gun. The SEM detection signal (the secondary electron, backscattered electron) of the acceleration voltage (1∼1.5 kV) is a sample surface number atom. The treatment is being requested to be made in front of the surface of a rapid sample where damage dose not occur. The treatment can improve the image of SEM remarkably before the sample for which rf-GD was used. Then, we can obtain much information about the material. Furthermore, it can be applied to focus ion beam (FIB) to a transmission electron microscope (TEM) sample preparation process. Rf-GD is the most effective means to solve polluted layer removal by Ga+ ion which is the subject of FIB.
