Abstract
Thin films of BN were prepared by a reactive sputtering method and the current-voltage (I-V) characteristics of an Al-BN-Au device were examined. The thickness of BN films ranged from 50 to 1000Å.
The transmission electron microscopy and the infrared absorption measurements were conducted on thin films deposited on unheated Si substrates.
The I-V characteristic for the unformed devices was in good agreement with the theoretical value for Schottky emission and the formed devices exhibited the voltage-controlled negative resistance (VCNR) phenomenon. The VCNR which was observed in this work differed, however, from that of oxide devices in that the voltage at the peak current depends on the partial pressure of O2 (Po2). Furthermore, it was found that the I-V characteristic of the formed samples fitted the relation, I=αV+βV2, below about 10-5Torr.
