Influence of anisotropic thermal stress during Si crystal growth on intrinsic point defect formation

Abstract

Anisotropic thermal stress near the melt/solid interface during growth of a Si crystal from a melt significantly affects control of grown-in defects when the diameter of the growing crystal is large. The effect on the behavior of intrinsic point defects in a growing Si crystal with 300-mm diameter was investigated by calculations and experiments. In addition, magnitude of the estimated thermal stress applying to the growing crystal is reconsidered with the Young’s Modulus.