A violet InGaN multi-quantum-well (MQW) separate confinement-heterostructure laser diode was grown on epitaxially laterally overgrown GaN (ELOG) on sapphire. The LDs showed an output power as highas 30 mW under room-temperature continuous-wave (CW) operation. The estimated lifetimes of the LDs were more than 1000 hours, during constant 30 mW output power at a case temperature of 60°C
