JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 63rd JSAP Spring Meeting 2016
Session ID : 20p-P9-2
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Device performance of InAlN/AlN/GaN HEMTs on free-standing GaN substrate
*Yoshimi YamashitaIssei WatanabeAkira EndhoAkifumi KasamatsuTakashi Mimura
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Keywords: 20p-P9-2, GaN, HEMT, InAlN
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© 2016 The Japan Society of Applied Physics
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