Ion implantation and diffusion of zinc in dense SnO2 ceramics

Minako HASHIGUCHI; Isao SAKAGUCHI; Naoya SAKAMOTO; Hisayoshi YURIMOTO; Shunichi HISHITA; Naoki OHASHI

doi:10.2109/jcersj2.121.1004

Technical report

Ion implantation and diffusion of zinc in dense SnO₂ ceramics

Minako HASHIGUCHI, Isao SAKAGUCHI, Naoya SAKAMOTO, Hisayoshi YURIMOTO, Shunichi HISHITA, Naoki OHASHI

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Keywords: Tin dioxide, Point defects, Diffusion, Secondary ion mass spectrometry

JOURNAL FREE ACCESS

2013 Volume 121 Issue 1420 Pages 1004-1007

DOI https://doi.org/10.2109/jcersj2.121.1004

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Abstract

We studied the diffusion of Zn in dense SnO₂ ceramics by using secondary ion mass spectrometry (SIMS). Dense SnO₂ ceramics with additives of 6 mol.% MgO and 0.2 mol.% Sb₂O₅ were synthesized, and Zn was implanted in the SnO₂ ceramics by ion implantation technique. The implanted samples were annealed at 850–1200°C, and the concentration profiles of Zn were evaluated by SIMS. The temperature dependence of Zn diffusion at 850–950°C could be expressed as D_Zn[cm²/s] = 3.3 × 10⁶ exp(−463.5[kJ/mol]/RT). These results in relation to the fabrication process of SnO₂ with added ZnO was then discussed.

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