Abstract
The positive-type diazonaphthoquinone/novolac (DNQ/novolac) resist on the 42-alloy substrate was irradiated by the second harmonic wave (532nm) of pulse Nd³⁻ YAGlaser. The resist was perfectly removed from the 42-alloy substrate. In spite of the existence of hexamethyldisilane(HMDS), which is the adhesive between resist and substrate, and in spite of resist pre-bake condition, the resist was removed. There was no damage to the substrate by the laser. The peeling strength of the resist with HMDS was about three times than that of the resist without HMDS (SAIGASmethod). By the laser irradiation, the actual removal width of the resist without HMDS was larger than that of the resist with HMDS. The peeling strength of the resist increased with increasing the pre-bake temperature. The actual removal width of the resist decreased with increasing the pre-bake temperature, too. The DNQ/novolac resist removal becomed possible by the laser irradiation.
