Advanced Experimental Mechanics
Online ISSN : 2424-175X
Print ISSN : 2189-4752
ISSN-L : 2189-4752
Materials Science and Processing
Delamination Behavior in Compression Bending Test of Organic Semiconductor Device
Toshiro KOBAYASHIShigeru NAGASAWAHideaki FURUMOTOIon GRUESCUAkinobu YAMAGUCHIYuichi UTSUMI
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2023 Volume 8 Pages 74-79

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Abstract

In the present study, experimental study was conducted on delamination caused in the compression bending test of organic semiconductor devices, and the effect of layer structure, bending strain, and bending frequency on delaminating occurrence and progression was investigated and discussed. In order to improve the flexibility of the flexible OLED, the authors have conducted a tensile test and investigated the delamination behavior due to crack susceptibility and compressive strain of constituent materials of organic semiconductor elements so far. In this study, specimens such as PEN substrate / PEDOT Alq / MgAg, PEN substrate / PEDOT / CBP / MgAg were prepared using wet process and vacuum process and subjected to compression bending test. As a result, the number of stripes due to delamination showed a constant value or a decreasing tendency when the compressive strain was 1% or more, and it was found that the maximum width of the stripes tended to increase although the minimum width of the stripes was not greatly changed. This is considered to be due to the fact that the width of the fringes initially generated increases with the increase in compressive strain and merges with the adjacent stripes.

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© 2023 The Japanese Society of Experimental Mechanics
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