Proceedings of Annual / Fall Meetings of Atomic Energy Society of Japan
2009 Fall Meeting
Session ID : H25
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Formation mechanism of nanometer-scale roughness in next-generation chemically-amplified resists
*Akinori Saeki, Takahiro Kozawa, Seiichi Tagawa
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Keywords: chemically-amplified resist, electron beam, Monte Carlo simulation, dissolution process, line edge roughness
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[in Japanese]
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© 2009 Atomic Energy Society of Japan
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