Article ID: 030104
Graphene is a promising material in its isolated form for applications to next-generation electronic devices; however, a strategy for modifying graphene to tune its carrier transport properties is required to meet the various requirements related to carrier density, electric mobility, and spin-orbit coupling. In this study, we modify graphene by irradiating the Au/I ion beam at 200 keV with doses of 1013–1014 cm−2 using a NaCl sacrificial layer to introduce ions as guest chemical species into a two-dimensional graphene sheet as a quantitative chemical modification method. Ion-irradiated graphene was evaluated by Raman spectroscopy, electrical conductivity measurement, and Rutherford backscattering spectrometry after removing the sacrificial layer. Both vacancies of carbon atoms, and Au atoms of 2.1 × 1013 cm−2/I atoms of 1.2 × 1013 cm−2 are introduced into graphene by irradiating an ion beam at a dose of 1014 cm−2; the latter acts as charged impurities, which results in the Raman D’ band and the downshift of the Fermi energy through hole carrier doping. The clarified knowledge of influences on electron transport properties by heavy-ion beam irradiation of graphene will help lead a new class of material development for electronics and spintronics.
