Derivation exact solutions of deposition profiles in CVD processes and application to automatic high speed modeling system

Abstract

Chemical Vapor Deposition (CVD) is the main process of semiconductor device fabrication. This research and development tends to be trial and error because of the complex reaction. For this reason, we have developed an automatic modeling system for reaction mechanisms in CVD. This system proposes a reaction models representing reaction rates and paths by using the deposition experimental data in CVD equipment. In the previous studies, the deposition profiles were calculated from the reaction models using the simulator based on the global optimization algorithm to evaluate this proposed reaction models. In this study, we formulated mass balance equations inside the CVD equipment, and derived an exact solution of the deposition profiles, therefore we succeeded in computing it from about 10 times to 1000 times faster than conventional algorithm. In addition, we implemented this exact solution in the automatic modeling system for reaction mechanisms and compared it with the conventional method for the analysis accuracy and the calculation cost.